K-Band Low Phase Noise VCO Based on Q-Boosted Switched Inductor

被引：5

作者：

Chen, Zhe ^{[1
]}

Chen, Ji-Xin ^{[1
]}

Yan, Pinpin ^{[1
]}

Hou, Debin ^{[1
]}

Zhu, Fang ^{[2
]}

机构：

[1] Southeast Univ, Sch Informat Sci & Engn, State Key Lab Millimeter Waves, Nanjing 210096, Jiangsu, Peoples R China

[2] Hangzhou Dianzi Univ, Sch Elect & Informat, Key Lab RF Circuits & Syst, Minist Educ, Hangzhou 310018, Zhejiang, Peoples R China

来源：

ELECTRONICS | 2019年 / 8卷 / 10期

基金：

中国国家自然科学基金;

关键词：

K-band; quality factor; phase noise; switched inductor; voltage-controlled oscillator; TUNING-RANGE;

D O I：

10.3390/electronics8101132

中图分类号：

TP [自动化技术、计算机技术];

学科分类号：

0812 ;

摘要：

In this article, the development of the K-band low phase noise voltage-controlled oscillator (VCO) based on Q-boosted switched inductor is presented. Compared with the conventional switched inductor, the eddy current will be decreased using a 2-turn secondary coil, and then the dissipated power from the switch on-resistance will also be decreased, leading to a boosted inductor Q at switch ON-state. The equivalent inductance, quality factor, and self-resonance frequency at switch ON/OFF states are analyzed and derived. For comparison, K-band VCOs have been designed and fabricated in a 130nm BiCMOS process with the Q-boosted and conventional switched inductors. Measured results show that the phase noise has been typically improved by 2-5dB at 100 kHz and 1 MHz offset at switch ON-state, using the Q-boosted switched inductor.

引用

页数：9

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