Laser operation of a heterojunction bipolar light-emitting transistor

被引：143

作者：

Walter, G

Holonyak, N

Feng, M

Chan, R

机构：

[1] Univ Illinois, Elect Engn Res Lab, Urbana, IL 61801 USA

[2] Univ Illinois, Dept Elect & Comp Engn, Urbana, IL 61801 USA

来源：

APPLIED PHYSICS LETTERS | 2004年 / 85卷 / 20期

关键词：

D O I：

10.1063/1.1818331

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Data are presented demonstrating the laser operation (quasicontinuous, similar to200 K) of an InGaP-GaAs-InGaAs heterojunction bipolar light-emitting transistor with AlGaAs confining layers and an InGaAs recombination quantum well incorporated in the p-type base region. Besides the usual spectral narrowing and mode development occurring at laser threshold, the transistor current gain beta=DeltaI(c)/DeltaI(b) in common emitter operation decreases sharply at laser threshold (6.5-->2.5,beta>1). (C) 2004 American Institute of Physics.

引用

页码：4768 / 4770

页数：3

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