Laser operation of a heterojunction bipolar light-emitting transistor

被引：142
|
作者：
Walter, G
Holonyak, N
Feng, M
Chan, R
机构：
[1] Univ Illinois, Elect Engn Res Lab, Urbana, IL 61801 USA
[2] Univ Illinois, Dept Elect & Comp Engn, Urbana, IL 61801 USA
来源：
APPLIED PHYSICS LETTERS | 2004年 / 85卷 / 20期
关键词：
D O I：
10.1063/1.1818331
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Data are presented demonstrating the laser operation (quasicontinuous, similar to200 K) of an InGaP-GaAs-InGaAs heterojunction bipolar light-emitting transistor with AlGaAs confining layers and an InGaAs recombination quantum well incorporated in the p-type base region. Besides the usual spectral narrowing and mode development occurring at laser threshold, the transistor current gain beta=DeltaI(c)/DeltaI(b) in common emitter operation decreases sharply at laser threshold (6.5-->2.5,beta>1). (C) 2004 American Institute of Physics.
引用
收藏
页码：4768 / 4770
页数：3
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