Investigation of InAs/GaSb-based superlattices by diffraction methods

被引：4

作者：

Ashuach, Y. ^{[1
]}

Kauffmann, Y. ^{[1
]}

Lakin, E. ^{[1
]}

Zolotoyabko, E. ^{[1
]}

Grossman, S. ^{[2
]}

Klin, O. ^{[2
]}

Weiss, E. ^{[2
]}

机构：

[1] Technion Israel Inst Technol, Dept Mat Engn, IL-32000 Haifa, Israel

[2] SCD, SemiCond Devices, IL-31021 Haifa, Israel

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 2010年 / 268卷 / 3-4期

关键词：

Superlattice; Interface strain; Atomic intermixing; X-ray diffraction; TEM; STRAIN; GROWTH; HETEROSTRUCTURES; MULTILAYERS; DETECTORS;

D O I：

10.1016/j.nimb.2009.09.041

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

We use high-resolution X-ray diffraction and high-resolution transmission electron microscopy in order to study the strain state, atomic intermixing and layer thicknesses in the MBE-grown GaSb/InSb/InAS/InSb superlattices. Simple and fast metrology procedure is developed, which allows us to obtain the most important technological parameters, such as the thicknesses of the GaSb, InAs and ultra-thin Insb sublayers, the superlattice period and the fraction of atomic substitutions in the InSb sub-layers. (C) 2009 Elsevier B.V. All rights reserved.

引用

页码：231 / 235

页数：5

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