Effect of Nd and Mn Co-Doping on Dielectric, Ferroelectric and Photovoltaic Properties of BiFeO3

被引:2
作者
Wu, Qiyuan [1 ]
Song, Yanling [1 ]
Jia, Caihong [1 ]
Gao, Zhaomeng [2 ]
Zhang, Weifeng [1 ]
机构
[1] Henan Univ, Ctr Topol Funct Mat, Key Lab Photovolta Mat, Kaifeng 475004, Peoples R China
[2] East China Normal Univ, Dept Elect, Key Lab Polar Mat & Devices MOE, Shanghai 200241, Peoples R China
基金
中国国家自然科学基金;
关键词
BiFeO3; film; piezoresponse force microscopy; dielectric; PUND measurement; ferroelectric; photovoltaic; THIN-FILMS; MULTIFERROIC PROPERTIES; ELECTRICAL-PROPERTIES; POLARIZATION;
D O I
10.3390/cryst12040500
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
Bi1-xNdxFe0.99Mn0.01O3 (BNFMO, x = 0.00 similar to 0.20) films were epitaxially grown on Nb:SrTiO3 (001) substrates using pulsed laser deposition. It was found that the Nd-doping concentration has a great impact on the surface morphology, crystal structure, and electrical properties. BNFMO thin film with low Nd-doping concentration (<= 16%) crystallizes into a rhombohedral structure, while the high Nd-doping (>16%) will lead to the formation of an orthogonal structure. Furthermore, to eliminate the resistive switching (RS) effect, a positive-up-negative-down (PUND) measurement was applied on two devices in series. The remnant polarization experiences an increase with the Nd-doping concentration increasing to 16%, then drops down with the further increased concentration of Nd. Finally, the ferroelectric photovoltaic effect is also regulated by the ferroelectric polarization, and the maximum photocurrent of 1758 mu A/cm(2) was obtained in Bi0.84Nd0.16Fe0.99Mn0.01O3 thin film. BNFMO films show great potential for ferroelectric and photovoltaic applications.
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页数:14
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