Fabrication and characterization of Mn-doped zinc silicate films on silicon wafer

被引：24
作者：
Ji, ZG [1 ]
Kun, L [1 ]
Song, YL [1 ]
Ye, ZZ [1 ]
机构：
[1] Zhejiang Univ, State Key Lab Silicon Mat, CMSCE, Hangzhou 310027, Peoples R China
来源：
JOURNAL OF CRYSTAL GROWTH | 2003年 / 255卷 / 3-4期
关键词：
photoluminescence; Si-based optoelectronics; zinc silicate;
D O I：
10.1016/S0022-0248(03)01291-0
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
Magnesium-doped zinc silicate (Mn: Zn2SiO4) Was prepared on oxidized silicon wafer using a simple sol-gel process. it is found from both XRD and UV-visible absorption experiment that when the process temperature was above 880degreesC, zinc silicate was formed on the silicon wafer, while when the temperature was below 880degreesC, zinc oxide was formed. The size of Mn: Zn2SiO4 grain in the film was about 100nm as determined by scanning force microscope. The photoluminescence (PL) spectrum showed that the peak wavelength of the green emission was at 525 nm. PL decay measurement showed a lifetime of about 21 ms, indicating possible application of this film in silicon-based displays. (C) 2003 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：353 / 356
页数：4
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