Study of Defects in Heterostructures with GaPAsN and GaPN Quantum Wells in the GaP Matrix

Heterostructures with GaP/GaP(1-x)N(x) and GaP/GaP(1-x-y)As(x)N(y) quantum wells grown by the MOCVD method are studied by methods of capacitance-voltage profiling and capacitive and current deep level transient spectroscopy. In heterostructures with GaP/GaP(1-x)N(x) quantum wells, intrinsic defects with deep levels of 0.17 and 0.08 eV are revealed. It is shown that a considerable decrease in the concentration of these defects occurs with the substitution of a ternary GaP(1-x)N(x) alloy forming the region of the quantum well by a GaP(1-x-y)As(x)N(y) quaternary alloy. The nature of emerging defects and mechanisms of decreasing their concentration are discussed.