Micromachind magnetostatic wave band - Stop resonator

被引：0

作者：

Sajin, G ^{[1
]}

Craciunoiu, F ^{[1
]}

Marcelli, R ^{[1
]}

Cismaru, A ^{[1
]}

机构：

[1] Natl Res & Dev Inst Microtechnol, Bucharest 72996, Romania

来源：

CAS: 2002 INTERNATIONAL SEMICONDUCTOR CONFERENCE, VOLS 1 AND 2, PROCEEDINGS | 2001年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A band - stop resonator on silicon wafer and micromachined silicon membrane is presented in this paper. As selective frequency component, a frequency tunable magnetostatic wave (MSW) straight edge resonator (SER) made by a YIG film, has been used. Frequency tunability ranged between 4.5 GHz - 7.5 GHz for different DC magnetic biasing fields. The maximum measured attenuation for bulk silicon supported rezonator in this frequency domain was -25 dB at 5.5 GHz. For membrane supported rezonator the maximum measured attenuation was -42 dB at 5.63 GHz for sample #1 SER and -36 dB at 5.34 GHz for sample #2 SER.

引用

页码：37 / 40

页数：4