Electrical and optical properties of melting Au/Si eutectics on Si(111)

被引：5
作者：
Bruggemann, M
Mummler, K
Wissmann, P
机构：
[1] Institute of Physical and Theoretical Chemistry, University of Erlangen-Nürnberg, D-91058 Erlangen
来源：
FRESENIUS JOURNAL OF ANALYTICAL CHEMISTRY | 1997年 / 358卷 / 1-2期
关键词：
D O I：
10.1007/s002160050377
中图分类号：
O65 [分析化学];
学科分类号：
070302 ; 081704 ;
摘要：
The Au/Si system exhibits an extremely low eutectic temperature of 363 degrees C. Thin gold films of 200 nm thickness were deposited on Si(111) single-crystals and the electrical and optical properties of the melting mixtures were investigated. The resistivity measurements were performed in situ in a combined LEED/Auger apparatus. A highly resolving spectroscopic ellipsometer was used for the optical analysis in the wavelength range 400-900 nm, The eutectic temperature was found to be lower than for bulk Au/Si samples. The structure analysis showed that small liquid Au/Si islands embedded in the silicon surface are formed by the melting process. Various heating/cooling cycles show a characteristic hysteresis behaviour.
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页码：179 / 181
页数：3
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