18.4%-Efficient Heterojunction Si Solar Cells Using Optimized ITO/Top Electrode

被引：34

作者：

Kim, Namwoo ^{[1
]}

Um, Han-Don ^{[1
]}

Choi, Inwoo ^{[2
]}

Kim, Ka-Hyun ^{[2
]}

Seo, Kwanyong ^{[1
]}

机构：

[1] UNIST, Dept Energy Engn, Ulsan 44919, South Korea

[2] Korea Inst Energy Res, Adv Ctr Energy, KIER UNIST, Ulsan 44919, South Korea

来源：

ACS APPLIED MATERIALS & INTERFACES | 2016年 / 8卷 / 18期

关键词：

heterojunction solar cell; current loss; indium tin oxide; top electrode; microgrid; SILICON; EFFICIENCY; OXIDE; LIFETIME;

D O I：

10.1021/acsami.6b00981

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

We optimize the thickness of a transparent conducting oxide (TCO) layer, and apply a microscale mesh pattern metal electrode for high-efficiency a-Si/c-Si heterojunction solar cells. A solar cell equipped with the proposed microgrid metal electrode demonstrates a high short-circuit current density (J(sc)) of 40.1 mA/cm(2), and achieves a high efficiency of 18.4% with an open-circuit voltage (V-OC) of 618 mV and a fill factor (FF) of 74.1% as result of the shortened carrier path length and the decreased electrode area of the microgrid metal electrode. Furthermore, by optimizing the process sequence for electrode formation, we are able to effectively restore the reduction in V-OC that occurs during the microgrid metal electrode formation process. This work is expected to become a fundamental study that can effectively improve current loss in a-Si/c-Si heterojunction solar cells through the optimization of transparent and metal electrodes.

引用

页码：11412 / 11417

页数：6

共 30 条

[1] Meniscus-Mask Lithography for Fabrication of Narrow Nanowires [J].