Structural influence of erbium centers on silicon nanocrystal phase transitions

被引：20

作者：

Senter, RA ^{[1
]}

Pantea, C

Wang, YJ

Liu, HZ

Zerda, TW

Coffer, JL

机构：

[1] Texas Christian Univ, Dept Chem, Ft Worth, TX 76129 USA

[2] Texas Christian Univ, Dept Phys, Ft Worth, TX 76129 USA

[3] Argonne Natl Lab, HPCAT, Argonne, IL 60439 USA

来源：

PHYSICAL REVIEW LETTERS | 2004年 / 93卷 / 17期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1103/PhysRevLett.93.175502

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Two different types of erbium-doped silicon nanocrystals, along with undoped, oxide-capped Si dots, are employed to probe the impact of the impurity center location on phase transition pressure. Using a combination of high pressure optical absorption, micro-Raman, and x-ray diffraction measurements in a diamond anvil cell, it is demonstrated that the magnitude of this phase transition elevation is strongly dictated by the average spatial location of impurity centers introduced into the nanocrystal along with the interfacial quality of the surrounding oxide.

引用

页码：175502 / 1

页数：4

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