Full-band Monte Carlo simulations of high-field electron transport in GaAs and ZnS -: art. no. 201201

被引：23

作者：

Fitzer, N ^{[1
]}

Kuligk, A

Redmer, R

Städele, M

Goodnick, SM

Schattke, W

机构：

[1] Univ Rostock, Fachbereich Phys, D-18051 Rostock, Germany

[2] Infineon Technol AG, Corp Res ND, D-81730 Munich, Germany

[3] Arizona State Univ, Dept Elect Engn, Tempe, AZ 85287 USA

[4] Univ Kiel, Inst Theoret Phys, D-24118 Kiel, Germany

来源：

PHYSICAL REVIEW B | 2003年 / 67卷 / 20期

关键词：

D O I：

10.1103/PhysRevB.67.201201

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We study the high-field transport in GaAs and ZnS based on ab initio band structures determined within density-functional theory using an exact exchange formalism with a local-density approximation for correlations. The transport properties are gained from ensemble Monte Carlo simulations where all relevant scattering mechanisms are considered including a realistic impact ionization rate. Important results are shown for the drift velocity, the mean kinetic energy, and the valley occupation.

引用

页数：4

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