Analysis of on-chip spiral inductors using the distributed capacitance model

被引:64
作者
Wu, CH [1 ]
Tang, CC
Liu, SI
机构
[1] Natl Taiwan Univ, Dept Elect Engn, Taipei 10617, Taiwan
[2] Natl Taiwan Univ, Grad Inst Elect Engn, Taipei 10617, Taiwan
关键词
distributed capacitance model (DCM); miniature three-dimensional inductor; on-chip inductor; stacked inductor;
D O I
10.1109/JSSC.2003.811965
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
In this paper, a distributed capacitance model (I)CM) for monolithic spiral inductors is developed to predict the equivalent capaciting coupling capacitances C-p between the two terminals and the equivalent capacitance between the metal track and the substrate C-sub. Therefore, the characteristics of inductors such as the S parameter, the quality factor Q, and the self-resonant frequency f(SR) can be predicted by its series inductance, equivalent capacitances, and series resistance. A large number of inductors have been implemented in 0.25- and 0.35-mum CMOS processes to demonstrate the prediction accuracy. For planar and multilayer inductors, DCM can provide a quick and accurate assessment to the design of monolithic spiral inductors.
引用
收藏
页码:1040 / 1044
页数:5
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