Improving carrier mobility of polycrystalline Ge by Sn doping

To improve the performance of electronic devices, extensive research efforts have recently focused on the effect of incorporating Sn into Ge. In the present work, we investigate how Sn composition x (0 <= x <= 0.12) and deposition temperature T-d (50 <= T-d <= 200 degrees C) of the Ge1-xSnx precursor affect subsequent solid-phase crystallization. Upon incorporating 3.2% Sn, which is slightly above the solubility limit of Sn in Ge, the crystal grain size increases and the grain-boundary barrier decreases, which increases the hole mobility from 80 to 250 cm(2)/Vs. Furthermore, at T-d = 125 degrees C, the hole mobility reaches 380 cm(2)/Vs, which is tentatively attributed to the formation of a dense amorphous GeSn precursor. This is the highest hole mobility for semiconductor thin films on insulators formed below 500 degrees C. These results thus demonstrate the usefulness of Sn doping of polycrystalline Ge and the importance of temperature while incorporating Sn. These findings make it possible to fabricate advanced Ge-based devices including high-speed thin-film transistors.