Statistical Modeling With the PSP MOSFET Model

被引：13

作者：

Li, X. ^{[1
]}

McAndrew, C. C. ^{[2
]}

Wu, W. ^{[1
]}

Chaudhry, S. ^{[3
]}

Victory, J. ^{[4
]}

Gildenblat, G. ^{[1
]}

机构：

[1] Arizona State Univ, Tempe, AZ 85281 USA

[2] Freescale Semicond, Tempe, AZ 85284 USA

[3] Jazz Semicond, Newport Beach, CA 92660 USA

[4] Sentinel IC Technol, Irvine, CA 92651 USA

来源：

IEEE TRANSACTIONS ON COMPUTER-AIDED DESIGN OF INTEGRATED CIRCUITS AND SYSTEMS | 2010年 / 29卷 / 04期

关键词：

Backward propagation of variance; PSP model; statistical modeling; FLUCTUATIONS; DESIGN;

D O I：

10.1109/TCAD.2010.2042892

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

PSP and the backward propagation of variance (BPV) method are used to characterize the statistical variations of metal-oxide-semiconductor field effect transistors (MOSFETs). BPV statistical modeling of NMOS and PMOS devices is, for the first time, coupled by including self-consistent modeling of ring oscillator gate delays. Parasitic capacitances are included in the analysis. The proposed technique is validated using Monte-Carlo simulations and by comparison to experimental data from two technologies.

引用

页码：599 / 606

页数：8

共 19 条

[1] Mismatch characterization of ring oscillators [J].