Two-dimensional ReS2: Solution to the unresolved queries on its structure and inter-layer coupling leading to potential optical applications

被引:12
作者
Gadde, Janardhan Rao [1 ]
Karmakar, Anasuya [2 ]
Maji, Tuhin Kumar [3 ]
Mukherjee, Subhrajit [4 ]
Alexander, Rajath [5 ]
Sharma, Anjanashree M. R. [6 ]
Das, Sarthak [7 ]
Mandal, Anirban [8 ]
Dasgupta, Kinshuk [5 ]
Naik, Akshay [6 ]
Majumdar, Kausik [7 ]
Hawaldar, Ranjit [1 ]
Adarsh, K., V [8 ]
Ray, Samit Kumar [4 ,9 ]
Karmakar, Debjani [10 ]
机构
[1] Ctr Mat Elect Technol, Pune 411008, Maharashtra, India
[2] Indian Inst Sci Educ & Res, Pune 411008, Maharashtra, India
[3] SN Bose Natl Ctr Basic Sci, Dept Chem Biol & Macromol Sci, Kolkata 700106, India
[4] Indian Inst Technol Kharagpur, Dept Phys, Kharagpur 721302, W Bengal, India
[5] Bhabha Atom Res Ctr, Adv Carbon Mat Sect, Mat Sci Grp, Mumbai 400085, Maharashtra, India
[6] Indian Inst Sci, Ctr Nano Sci & Engn, Bangalore 560012, Karnataka, India
[7] Indian Inst Sci, Dept Elect Commun Engn, Bangalore 560012, Karnataka, India
[8] Indian Inst Sci Educ & Res, Dept Phys, Bhopal 462066, India
[9] SN Bose Natl Ctr Basic Sci, Dept Condensed Matter Phys & Mat Sci, Kolkata 700106, India
[10] Bhabha Atom Res Ctr, Tech Phys Div, Mumbai 400085, Maharashtra, India
关键词
FIELD-EFFECT TRANSISTORS; CHEMICAL-VAPOR-DEPOSITION; LARGE-AREA; CRYSTAL-STRUCTURE; RHENIUM; TRANSITIONS; DEPENDENCE; TECHNETIUM; EFFICIENT; EXCITONS;
D O I
10.1103/PhysRevMaterials.5.054006
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Over the last few years, ReS2 has generated a myriad of unattended queries regarding its structure, the concomitant thickness-dependent electronic properties, and its apparently contrasting experimental optical response. In this paper, with elaborate first-principles investigations, using density functional theory (DFT) and time-dependent DFT, we identify the structure of ReS2, which is capable of reproducing and analyzing the layer-dependent optical response. The theoretical results are further validated by an in-depth structural, chemical, optical, and optoelectronic analysis of the large-area ReS2 thin films, grown by the chemical vapor deposition (CVD) process. Micro-Raman, x-ray photoelectron spectroscopy, cross-sectional transmission electron microscopy, and energy-dispersive x-ray analysis have enabled the optimization of the uniform growth of the CVD films. The correlation between the optical and electronic properties was established by static photoluminescence and excited state transient absorption measurements. Sulfur vacancy-induced localized mid-gap states render a significantly long lifetime of the excitons in these films. The ionic gel top-gated photodetectors, fabricated from the as-prepared CVD films, exhibit a large photo-response of similar to 5 A/W and a remarkable detectivity of similar to 10(11) Jones. The outcome of this paper will be useful in promoting the application of vertically grown large-area films in the field of optics and opto-electronics.
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页数:15
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