MODELLING OF QUANTUM WIRES IN THE INTERFACE LAYER OF THE SEMICONDUCTOR-OXIDE STRUCTURES WITH CHARGE BUILT IN OXIDE

被引：0

作者：

Atamuratov, A. E. ^{[1
]}

机构：

[1] Urganch State Univ, Urganch, Uzbekistan

来源：

COMPLEX PHENOMENA IN NANOSCALE SYSTEMS | 2009年

关键词：

Quantum wires; Semiconductor nanostructures; Charge density; HETEROSTRUCTURES; SURFACE; SIO2;

D O I：

10.1007/978-90-481-3120-4_22

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

In this we study formation of it nanoscale potential well with nanowires near the oxide-semiconductor interface by special a charge distribution built-in in oxide. The SiO2-Si structure with a cylindrical substrate covered by a coaxial oxide layer is considered. The dependence of the potential well parameters oil the geometry, size and built-in chargee density is analyzed. The case of two charged rings also is considered. Parallel rings is also considered

引用

页码：229 / 236

页数：8

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