Electrical Characterization of MEH-PPV Based Schottky Diodes
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作者:
Nimith, K. M.
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机构:
NITK, Dept Phys, Optoelect Lab OEL, PO Srinivasnagar, DK-575025 Mangalore, IndiaNITK, Dept Phys, Optoelect Lab OEL, PO Srinivasnagar, DK-575025 Mangalore, India
Nimith, K. M.
[1
]
Satyanarayan, M. N.
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机构:
NITK, Dept Phys, Optoelect Lab OEL, PO Srinivasnagar, DK-575025 Mangalore, IndiaNITK, Dept Phys, Optoelect Lab OEL, PO Srinivasnagar, DK-575025 Mangalore, India
Satyanarayan, M. N.
[1
]
Umesh, G.
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机构:
NITK, Dept Phys, Optoelect Lab OEL, PO Srinivasnagar, DK-575025 Mangalore, IndiaNITK, Dept Phys, Optoelect Lab OEL, PO Srinivasnagar, DK-575025 Mangalore, India
Umesh, G.
[1
]
机构:
[1] NITK, Dept Phys, Optoelect Lab OEL, PO Srinivasnagar, DK-575025 Mangalore, India
来源:
INTERNATIONAL CONFERENCE ON CONDENSED MATTER AND APPLIED PHYSICS (ICC 2015)
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2016年
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1728卷
关键词:
LIGHT-EMITTING-DIODES;
POLYMERS;
DEVICE;
D O I:
10.1063/1.4946433
中图分类号:
O59 [应用物理学];
学科分类号:
摘要:
MEH-PPV Schottky diodes with and without Poly(3,4-ethylenedioxythiophene)-poly(styrenesulfonate) (PEDOT-PSS) have been fabricated and characterized. The highlight of this work is that all the fabrication and characterization steps had been carried out in the ambient conditions and the device fabrication was done without any UV-Ozone surface treatment of ITO anodes. Current Density-Voltage characteristics shows that the addition of hole injection layer (HIL) enhances the charge injection into the polymer layer by reducing the energy barrier across the Indium Tin Oxide (ITO)-Organic interface. The rectification ratio increases to 2.21 from 0.76 at 5V for multilayer devices compared to single layer devices. Further we investigated the effect of an alkali metal fluoride (LiF) by inserting a thin layer in between the organic layer and Aluminum (Al) cathode. The results of these investigations will be discussed in detail.
机构:
Univ Monastir, Fac Sci, Mat Nouveaux & Dispositifs Elect Organ, Unite Rech UR 11ES55, Monastir 5000, TunisiaUniv Monastir, Fac Sci, Mat Nouveaux & Dispositifs Elect Organ, Unite Rech UR 11ES55, Monastir 5000, Tunisia
Abbassi, F.
Mbarek, M.
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机构:
Univ Monastir, Fac Sci, Mat Nouveaux & Dispositifs Elect Organ, Unite Rech UR 11ES55, Monastir 5000, TunisiaUniv Monastir, Fac Sci, Mat Nouveaux & Dispositifs Elect Organ, Unite Rech UR 11ES55, Monastir 5000, Tunisia
Mbarek, M.
Kreher, D.
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机构:
UPMC Univ Paris 06, Sorbonne Univ, IPCM, UMR 8232,Chim Polymeres, F-75005 Paris, France
CNRS, IPCM, UMR 8232, Chim Polymeres, F-75005 Paris, FranceUniv Monastir, Fac Sci, Mat Nouveaux & Dispositifs Elect Organ, Unite Rech UR 11ES55, Monastir 5000, Tunisia
Kreher, D.
Alimi, K.
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机构:
Univ Monastir, Fac Sci, Mat Nouveaux & Dispositifs Elect Organ, Unite Rech UR 11ES55, Monastir 5000, Tunisia
Univ Gafsa, Gafsa 2100, TunisiaUniv Monastir, Fac Sci, Mat Nouveaux & Dispositifs Elect Organ, Unite Rech UR 11ES55, Monastir 5000, Tunisia
机构:
Pettit Appl Technol, Charlottesville, VA 22902 USA
Univ Virginia, Dept Chem, Charlottesville, VA 22904 USAPettit Appl Technol, Charlottesville, VA 22902 USA
Ferrance, Jerome P.
Meissner, Kenith E.
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机构:
Texas A&M Univ, Dept Biomed Engn, College Stn, TX 77843 USAPettit Appl Technol, Charlottesville, VA 22902 USA
Meissner, Kenith E.
Pettit, John W.
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机构:
Pettit Appl Technol, Gaithersburg, MD 20879 USAPettit Appl Technol, Charlottesville, VA 22902 USA