Electrical Characterization of MEH-PPV Based Schottky Diodes

被引：0

作者：

Nimith, K. M. ^{[1
]}

Satyanarayan, M. N. ^{[1
]}

Umesh, G. ^{[1
]}

机构：

[1] NITK, Dept Phys, Optoelect Lab OEL, PO Srinivasnagar, DK-575025 Mangalore, India

来源：

INTERNATIONAL CONFERENCE ON CONDENSED MATTER AND APPLIED PHYSICS (ICC 2015) | 2016年 / 1728卷

关键词：

LIGHT-EMITTING-DIODES; POLYMERS; DEVICE;

D O I：

10.1063/1.4946433

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

MEH-PPV Schottky diodes with and without Poly(3,4-ethylenedioxythiophene)-poly(styrenesulfonate) (PEDOT-PSS) have been fabricated and characterized. The highlight of this work is that all the fabrication and characterization steps had been carried out in the ambient conditions and the device fabrication was done without any UV-Ozone surface treatment of ITO anodes. Current Density-Voltage characteristics shows that the addition of hole injection layer (HIL) enhances the charge injection into the polymer layer by reducing the energy barrier across the Indium Tin Oxide (ITO)-Organic interface. The rectification ratio increases to 2.21 from 0.76 at 5V for multilayer devices compared to single layer devices. Further we investigated the effect of an alkali metal fluoride (LiF) by inserting a thin layer in between the organic layer and Aluminum (Al) cathode. The results of these investigations will be discussed in detail.

引用

页数：4

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