Contactless electroreflectance and photoluminescence characterization of Zn0.68Be0.06Mg0.26Se crystalline alloys

被引:8
作者
Dumcenco, D. O. [1 ,4 ]
Chen, Y. M. [1 ]
Huang, Y. S. [1 ]
Firszt, F. [2 ]
Legowski, S. [2 ]
Meczynska, H. [2 ]
Marasek, A. [2 ]
Tiong, K. K. [3 ]
机构
[1] Natl Taiwan Univ Sci & Technol, Dept Elect Engn, Taipei 106, Taiwan
[2] Nicholas Copernicus Univ, Inst Phys, PL-87100 Torun, Poland
[3] Natl Taiwan Ocean Univ, Dept Elect Engn, Chilung 202, Taiwan
[4] Moldavian Acad Sci, Inst Appl Phys, MD-2028 Kishinev, Moldova
关键词
Semiconductors; Optical properties; TEM; Optical spectroscopy; Luminescence; POSITRON-ANNIHILATION; ZN1-XMGXSE; POLYTYPES; LUMINESCENCE; DEGRADATION; DEFECTS; 4H;
D O I
10.1016/j.jallcom.2009.10.234
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
In this report, results of optical characterization of Bridgman-grown Zn0.68Be0.06Mg0.26Se crystalline alloys in the near-band-edge interband transitions region using temperature-dependent contactless electroreflectance (CER) and photoluminescence (PL) in the temperature range 10-300 K and time-resolved PL measurements at 10 K are presented. Two features with separation energy of 40 meV are observed in the near-band-edge CER spectra. The origins of these two features are attributed to the fundamental band-edge excitonic transitions of the coexisted different crystal phases in accordance with the X-ray diffraction and transmission electron microscope results. The increase of the broadening parameter of the excitonic feature of the PL spectra with increasing temperature has been attributed to the electron-longitudinal optical phonon interactions. In addition, the transient PL spectrum at 10 K in the excitonic emission region exhibits the asymmetric lineshape and can be deconvoluted into two Gaussian features with one order of magnitude difference in the decay time. These two components are assigned to the recombination of free excitons and localized excitons in this quaternary compound. (C) 2009 Elsevier B.V. All rights reserved.
引用
收藏
页码:472 / 476
页数:5
相关论文
共 30 条
[1]   Slow-mode degradation mechanism and its control in new bright and long-lived ZnSe white LEDs [J].
Adachi, M ;
Ando, K ;
Abe, T ;
Inoue, N ;
Urata, A ;
Tsutsumi, S ;
Hashimoto, Y ;
Kasada, H ;
Katayama, K ;
Nakamura, T .
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 2006, 243 (04) :943-949
[2]   Bi-modal Raman response of Be-Se vibration in Znl1-x-yMgyBexSe alloys [J].
Ajjoun, M ;
Tite, T ;
Chafi, A ;
Laurenti, JP ;
Pagès, O ;
Tournié, E .
JOURNAL OF ALLOYS AND COMPOUNDS, 2004, 382 (1-2) :271-274
[3]   SCHOTTKY-BARRIER ELECTROREFLECTANCE-APPLICATION TO GAAS [J].
ASPNNES, DE ;
STUDNA, AA .
PHYSICAL REVIEW B, 1973, 7 (10) :4605-4652
[4]   Structural investigations of polytypes in Zn1-xMgxSe by transmission electron microscopy and cathodoluminescence [J].
Falke, U ;
Cichos, A ;
Firszt, F ;
Meczynska, H ;
Dluzewski, P ;
Paszkowicz, W ;
Lenzner, J ;
Hietschold, M .
JOURNAL OF CRYSTAL GROWTH, 1998, 184 :1015-1020
[5]   Coexistence of 2H and 4H polytypes in Zn1-xMgxSe observed by photo- and cathodoluminescence [J].
Firszt, F ;
Cichos, A ;
Dluzewski, P ;
Falke, U ;
Hietschold, M ;
Lenzner, J ;
Legowski, S ;
Meczynska, H ;
Paszkowicz, W .
SOLID STATE COMMUNICATIONS, 1998, 108 (06) :367-370
[6]   Radiative recombination processes in Zn1-xMgxSe layers [J].
Firszt, F .
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1997, 12 (03) :272-279
[7]   Luminescence of Zn1-xMgxSe, Zn1-xMgxSe:Al and Zn1-xMgxSe:I mixed crystals grown by Bridgman method [J].
Firszt, F ;
Legowski, S ;
Meczynska, H ;
Oczkowski, HL ;
Osinska, W ;
Szatkowski, J ;
Paszkowicz, W ;
Spolnik, ZM .
JOURNAL OF CRYSTAL GROWTH, 1996, 159 (1-4) :167-170
[8]   Defects and degradation in wide gap II-VI based structures and light-emitting devices [J].
Guha, S ;
Petruzzello, J .
II-VI BLUE/GREEN LIGHT EMITTERS : DEVICE PHYSICS AND EPITAXIAL GROWTH, 1997, 44 :271-318
[9]   FINE STRUCTURE AND MAGNETO-OPTIC EFFECTS IN EXCITON SPECTRUM OF CADMIUM SULFIDE [J].
HOPFIELD, JJ ;
THOMAS, DG .
PHYSICAL REVIEW, 1961, 122 (01) :35-&
[10]   Optical characterization of Zn0.96Be0.04Se and ZP0.93Mg0.07Se mixed crystals [J].
Hsu, H. P. ;
Huang, P. J. ;
Huang, C. T. ;
Huang, Y. S. ;
Firszt, F. ;
Légowski, S. ;
Meczynka, H. ;
Strzalkowski, K. ;
Marasek, A. ;
Tiong, K. K. .
JOURNAL OF APPLIED PHYSICS, 2008, 103 (01)