Studies of Mg-GaN grown by MBE on GaAs(111)B substrates

被引:0
|
作者
Cheng, TS
Foxon, CT
Jeffs, NJ
Dewsnip, DJ
Flannery, L
Orton, JW
Novikov, SV
Ber, BY
Kudriavtsev, YA
机构
[1] UNIV NOTTINGHAM, DEPT PHYS, NOTTINGHAM NG7 2RD, ENGLAND
[2] UNIV NOTTINGHAM, DEPT ELECT & ELECT ENGN, NOTTINGHAM NG7 2RD, ENGLAND
[3] AF IOFFE PHYS TECH INST, ST PETERSBURG 194021, RUSSIA
来源
MRS INTERNET JOURNAL OF NITRIDE SEMICONDUCTOR RESEARCH | 1997年 / 2卷 / 13-15期
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中图分类号
T [工业技术];
学科分类号
08 ;
摘要
This paper discusses the growth of Mg-doped GaN samples using a modified Molecular Beam Epitaxy (MBE) method. Our results suggest that the dopant is incorporated from a surface population maintained by the incident Mg flux by a rapid diffusion mechanism. It follows that the chemical concentration will increase with time of growth and that the p-doping level will also increase progressively with film thickness for a given Mg flux. Increasing the Mg flux to the surface results at first in a higher doping density, but this saturates when the Mg surface concentration reaches a finite value.
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页数:4
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