[3] AF IOFFE PHYS TECH INST, ST PETERSBURG 194021, RUSSIA
来源:
MRS INTERNET JOURNAL OF NITRIDE SEMICONDUCTOR RESEARCH
|
1997年
/
2卷
/
13-15期
关键词:
D O I:
暂无
中图分类号:
T [工业技术];
学科分类号:
08 ;
摘要:
This paper discusses the growth of Mg-doped GaN samples using a modified Molecular Beam Epitaxy (MBE) method. Our results suggest that the dopant is incorporated from a surface population maintained by the incident Mg flux by a rapid diffusion mechanism. It follows that the chemical concentration will increase with time of growth and that the p-doping level will also increase progressively with film thickness for a given Mg flux. Increasing the Mg flux to the surface results at first in a higher doping density, but this saturates when the Mg surface concentration reaches a finite value.