A Novel High-Gain Amplifier Circuit Using Super-Steep-Subthreshold-Slope Field-Effect Transistors

被引：9

作者：

Couriol, Matthieu ^{[1
]}

Cadareanu, Patsy ^{[1
]}

Giacomin, Edouard ^{[1
]}

Gaillardon, Pierre-Emmanuel ^{[1
]}

机构：

[1] Univ Utah, Salt Lake City, UT 84112 USA

来源：

PROCEEDINGS OF THE 2021 IFIP/IEEE INTERNATIONAL CONFERENCE ON VERY LARGE SCALE INTEGRATION (VLSI-SOC) | 2021年

基金：

美国国家科学基金会;

关键词：

DESIGN;

D O I：

10.1109/VLSI-SoC53125.2021.9606989

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

The benefits of steep-Subthreshold Swing (SS) devices, though plentiful at the device-level, have yet to be fully exploited at the circuit-level. This is evident from a look at the Three-Independent-Gate Field-Effect Transistor (TIGFET), a device renown for its ability for polarity reconfiguration. At the same time, its demonstrated dynamic control of the subthreshold slope beyond the thermal limit has only been studied at the device-level. This latter benefit is referred to as Super-Steep Subthreshold Slope (S4) operation and can lead to unprecedented gain, which is ideal for use in an amplifier circuit. In this paper, we investigate the impact of S4 operations when designing differential-amplifier circuits when using TIGFET technology. We demonstrate the benefits of our implementation both from a theoretical standpoint and through circuit-level analyses. More specifically, we show that the TIGFET-based amplifier gain is 95.5x better, and that the gain-bandwidth product is improved by 13.8x, compared to an equivalent MOSFET-based design at the 90 nm node. Besides, we show that at equivalent gains, the TIGFET-based amplifier decreases the area and power by 22.8x and 7.2x, respectively, against its MOSFET counterpart.

引用

页码：54 / 59

页数：6