Accurate Analytical Physical Modeling of Amorphous InGaZnO Thin-Film Transistors Accounting for Trapped and Free Charges

被引：45
作者：
Ghittorelli, Matteo [1 ]
Torricelli, Fabrizio [1 ]
Colalongo, Luigi [1 ]
Kovacs-Vajna, Zsolt Miklos [1 ]
机构：
[1] Univ Brescia, Dept Informat Engn, I-25123 Brescia, Italy
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 2014年 / 61卷 / 12期
关键词：
Computer-aided design (CAD) applications; indium gallium zinc oxide (IGZO); thin-film transistor (TFT); TRANSPORT; CRYSTALLINE;
D O I：
10.1109/TED.2014.2361062
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A physical-based and analytical drain current model of amorphous indium gallium zinc oxide (a-IGZO) thin-film transistors (TFTs) is proposed. The model considers the combined contribution of both trapped and free charges that move through the a-IGZO film by multiple-trapping-and-release and percolation in conduction band. The model is compared with both measurements of TFTs fabricated on a flexible substrate and numerical simulations. It is accurate in the whole range of a-IGZO TFTs operation. The model requires only physical and geometrical device parameters. The resulting mathematical expressions are suitable for computer-aided design implementation and yield the material physical parameters that are essential for process characterization.
引用
收藏
页码：4105 / 4112
页数：8
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