Accurate Analytical Physical Modeling of Amorphous InGaZnO Thin-Film Transistors Accounting for Trapped and Free Charges

被引：46

作者：

Ghittorelli, Matteo ^{[1
]}

Torricelli, Fabrizio ^{[1
]}

Colalongo, Luigi ^{[1
]}

Kovacs-Vajna, Zsolt Miklos ^{[1
]}

机构：

[1] Univ Brescia, Dept Informat Engn, I-25123 Brescia, Italy

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2014年 / 61卷 / 12期

关键词：

Computer-aided design (CAD) applications; indium gallium zinc oxide (IGZO); thin-film transistor (TFT); TRANSPORT; CRYSTALLINE;

D O I：

10.1109/TED.2014.2361062

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A physical-based and analytical drain current model of amorphous indium gallium zinc oxide (a-IGZO) thin-film transistors (TFTs) is proposed. The model considers the combined contribution of both trapped and free charges that move through the a-IGZO film by multiple-trapping-and-release and percolation in conduction band. The model is compared with both measurements of TFTs fabricated on a flexible substrate and numerical simulations. It is accurate in the whole range of a-IGZO TFTs operation. The model requires only physical and geometrical device parameters. The resulting mathematical expressions are suitable for computer-aided design implementation and yield the material physical parameters that are essential for process characterization.

引用

页码：4105 / 4112

页数：8

共 37 条

[1] Implementation of the symmetric doped double-gate MOSFET model in Verilog-A for circuit simulation [J].

Alvarado, Joaquin ;

Iniguez, Benjamin ;

Estrada, Magali ;

Flandre, Denis ;

Cerdeira, Antonio .

INTERNATIONAL JOURNAL OF NUMERICAL MODELLING-ELECTRONIC NETWORKS DEVICES AND FIELDS, 2010, 23 (02) :88-106

[2] Modeling the behavior of amorphous oxide thin film transistors before and after bias stress [J].

Cerdeira, A. ;

Estrada, M. ;

Soto-Cruz, B. S. ;

Iniguez, B. .

MICROELECTRONICS RELIABILITY, 2012, 52 (11) :2532-2536

[3] Bipolar Resistive Switching Characteristics of Transparent Indium Gallium Zinc Oxide Resistive Random Access Memory [J].

Chen, Min-Chen ;

Chang, Ting-Chang ;

Huang, Sheng-Yao ;

Chen, Shih-Ching ;

Hu, Chih-Wei ;

Tsai, Chih-Tsung ;

Sze, Simon M. .

ELECTROCHEMICAL AND SOLID STATE LETTERS, 2010, 13 (06) :II191-II193

[4] A new analytical model for amorphous-silicon thin-film transistors including tail and deep states [J].

Colalongo, L .

SOLID-STATE ELECTRONICS, 2001, 45 (09) :1525-1530

[5] AN ANALYTICAL MOS-TRANSISTOR MODEL VALID IN ALL REGIONS OF OPERATION AND DEDICATED TO LOW-VOLTAGE AND LOW-CURRENT APPLICATIONS [J].

ENZ, CC ;

KRUMMENACHER, F ;

VITTOZ, EA .

ANALOG INTEGRATED CIRCUITS AND SIGNAL PROCESSING, 1995, 8 (01) :83-114

[6] Two-dimensional numerical simulation of radio frequency sputter amorphous In-Ga-Zn-O thin-film transistors [J].

Fung, Tze-Ching ;

Chuang, Chiao-Shun ;

Chen, Charlene ;

Abe, Katsumi ;

Cottle, Robert ;

Townsend, Mark ;

Kumomi, Hideya ;

Kanicki, Jerzy .

JOURNAL OF APPLIED PHYSICS, 2009, 106 (08)

[7] An Explicit Analytic Compact Model for Nanocrystalline Zinc Oxide Thin-Film Transistors [J].

Garcia-Sanchez, Francisco J. ;

Ortiz-Conde, Adelmo .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2012, 59 (01) :46-50

[8]

Hoorfar A., 2008, PURE APPL MATH, V9, P51

[9] Modeling of amorphous InGaZnO4 thin film transistors and their subgap density of states [J].

Hsieh, Hsing-Hung ;

Kamiya, Toshio ;

Nomura, Kenji ;

Hosono, Hideo ;

Wu, Chung-Chih .

APPLIED PHYSICS LETTERS, 2008, 92 (13)

[10] Modeling of amorphous InGaZnO thin-film transistors based on the density of states extracted from the optical response of capacitance-voltage characteristics [J].

Jeon, Kichan ;

Kim, Changjung ;

Song, Ihun ;

Park, Jaechul ;

Kim, Sunil ;

Kim, Sangwook ;

Park, Youngsoo ;

Park, Jun-Hyun ;

Lee, Sangwon ;

Kim, Dong Myong ;

Kim, Dae Hwan .

APPLIED PHYSICS LETTERS, 2008, 93 (18)

← 1 2 3 4 →