Identification of fragment ions produced from hexamethyldisilazane and production of low-energy mass-selected fragment ion beam

被引：5

作者：

Yoshimura, Satoru ^{[1
]}

Sugimoto, Satoshi ^{[1
]}

Takeuchi, Takae ^{[2
]}

Murai, Kensuke ^{[3
]}

Kiuchi, Masato ^{[1
,3
]}

机构：

[1] Osaka Univ, Grad Sch Engn, Ctr Atom & Mol Technol, 2-1 Yamada Oka, Suita, Osaka 5650871, Japan

[2] Nara Womens Univ, Dept Chem Biol & Environm Sci, Kitauoyanishi Machi, Nara, Nara 6308506, Japan

[3] Natl Inst Adv Ind Sci & Technol, 1-8-31 Midoriga Oka, Ikeda, Osaka 5638577, Japan

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 2018年 / 430卷

关键词：

Fragment ion; Hexamethyldisilazane; Low-energy ion beam; CHEMICAL-VAPOR-DEPOSITION; SILICON CARBONITRIDE FILMS; HOT TUNGSTEN WIRES; EFFICIENT METHOD; DERIVATIVES; SILYLATION; ACID;

D O I：

10.1016/j.nimb.2018.05.040

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

Fragment ions produced from hexamethyldisilazane (HMDS) with a hot tungsten wire in a Freeman-type ion source were assayed using a low-energy mass-selected ion beam system. The possible candidates of chemical formulae for these ions are C+, N+, CH3+, CH4+, Si+, SiCH5+, SiC(2)H6(+), SiC3H9+, Si2NCH4+, Si2NC2H7+, Si2NC3H10+, Si2NC4H12+, and Si2NC5H16+. The ion production strongly depended on the tungsten temperature. Among the HMDS derived fragment ions, SiCH5+ ions were mass-selected. The ion energy was 100 eV. Then, the SiCH5+ ions were irradiated to a Si substrate. It was inferred from the analysis of resulting deposited film that silicon carbide films containing a small amount of nitrogen atoms were deposited following the irradiation.

引用

页码：1 / 5

页数：5

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