Nucleation switching in phase change memory

被引:142
作者
Karpov, V. G. [1 ]
Kryukov, Y. A.
Savransky, S. D.
Karpov, I. V.
机构
[1] Univ Toledo, Dept Phys & Astron, Toledo, OH 43606 USA
[2] Intel Corp, Santa Clara, CA 95052 USA
关键词
D O I
10.1063/1.2715024
中图分类号
O59 [应用物理学];
学科分类号
摘要
The authors propose a simple physical model of threshold switching in phase change memory cells based on the field induced nucleation of conductive cylindrical crystallites. The model is solved analytically and leads to a number of predictions including correlations between the threshold voltage V-th and material parameters, such as the nucleation barrier and radius, amorphous layer thickness, as well as V-th versus temperature and switching delay time. The authors have carried out verifying experiments, and good agreement is achieved. (c) 2007 American Institute of Physics.
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页数:3
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