Thermal conductivity of β-Si3N4 single crystal

被引：9
作者：
Watari, K
Li, BC
Pottier, L
Fournier, D
Toriyama, M
机构：
[1] Natl Ind Res Inst Nagoya, Kita Ku, Nagoya, Aichi 4628510, Japan
[2] Univ Paris 06, Lab Instrumentat, UPR A0005 CNRS, F-75005 Paris, France
来源：
ELECTROCERAMICS IN JAPAN III | 2000年 / 181-1卷
关键词：
Si3N4; single crystal; thermal conductivity;
D O I：
10.4028/www.scientific.net/KEM.181-182.239
中图分类号：
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
Intrinsic thermal conductivity of beta -Si3N4 was calculated from Debye temperature, Gruneisen's constant, average mass and volume of beta -Si3N4, and is estimated to be about 400 Wm(-1)K(-1) at room temperature. On the other hand, thermal conductivity of a beta -Si3N4 Single crystal grain in a sintered material, measured by thermoreflectance microscopy, is less than the calculated value, and is 180 Wm(-1)K(-1) along the c-axis. Based on the results, difference between the calculated and experimental values of beta -Si3N4 is also discussed.
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页码：239 / 242
页数：4
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