Optical characteristics of GaInP/GaP double-heterostructure core-shell nanowires embedded in polydimethylsiloxane membranes

被引：16

作者：

Tatebayashi, J. ^{[1
]}

Mariani, G. ^{[1
]}

Lin, A. ^{[1
]}

Hicks, R. F. ^{[2
]}

Huffaker, D. L. ^{[1
]}

机构：

[1] Univ Calif Los Angeles, Dept Elect Engn, Los Angeles, CA 90095 USA

[2] Univ Calif Los Angeles, Dept Chem & Biomol Engn, Los Angeles, CA 90095 USA

来源：

APPLIED PHYSICS LETTERS | 2010年 / 96卷 / 25期

基金：

美国国家科学基金会;

关键词：

catalysts; gallium compounds; III-V semiconductors; indium compounds; membranes; nanowires; photoluminescence; surface states; LIGHT-EMITTING-DIODES; DEVICES; PHOTOLUMINESCENCE; NANOCRYSTALS; MECHANISM; GROWTH; ARRAYS;

D O I：

10.1063/1.3455340

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The authors report on the optical properties of GaInP/GaP double-heterostructure (DH) core-shell nanowires (NWs) embedded in polydimethylsiloxane (PDMS) membranes. Self-catalyzed NW structures are grown on Si (111) substrates by initiating with the formation of Ga droplets as a catalyst which is followed by the growth of GaP core and GaInP DH shells. Optical characteristics of GaInP/GaP DH core-shell NWs transferred from Si substrates into PDMS membranes show enhanced 77 K light emission at 630 nm. The signal at 775 nm from the surface states of NWs can be mitigated by embedding the NWs in a PDMS membrane that acts as a surface state passivant. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3455340]

引用

页数：3

共 25 条

[1] CONFINEMENT OF CHARGE-CARRIERS AND MOLECULAR EXCITONS WITHIN 5-NM-THICK EMITTER LAYER IN ORGANIC ELECTROLUMINESCENT DEVICES WITH A DOUBLE HETEROSTRUCTURE [J].

ADACHI, C ;

TSUTSUI, T ;

SAITO, S .

APPLIED PHYSICS LETTERS, 1990, 57 (06) :531-533

[2] LIGHT-EMITTING-DIODES BASED ON CONJUGATED POLYMERS [J].

BURROUGHES, JH ;

BRADLEY, DDC ;

BROWN, AR ;

MARKS, RN ;

MACKAY, K ;

FRIEND, RH ;

BURN, PL ;

HOLMES, AB .

NATURE, 1990, 347 (6293) :539-541

[3] Electroluminescence from single monolayers of nanocrystals in molecular organic devices [J].

Coe, S ;

Woo, WK ;

Bawendi, M ;

Bulovic, V .

NATURE, 2002, 420 (6917) :800-803

[4]

COLVIN VL, 1994, NATURE, V370, P354, DOI 10.1038/370354a0

[5] Functional nanoscale electronic devices assembled using silicon nanowire building blocks [J].

Cui, Y ;

Lieber, CM .

SCIENCE, 2001, 291 (5505) :851-853

[6] Self-aligning planarization and passivation for integration applications in III-V semiconductor devices [J].

Demir, HV ;

Zheng, JF ;

Sabnis, VA ;

Fidaner, O ;

Hanberg, J ;

Harris, JS ;

Miller, DAB .

IEEE TRANSACTIONS ON SEMICONDUCTOR MANUFACTURING, 2005, 18 (01) :182-189

[7] Single-nanowire electrically driven lasers [J].

Duan, XF ;

Huang, Y ;

Agarwal, R ;

Lieber, CM .

NATURE, 2003, 421 (6920) :241-245

[8] Growth of nanowire superlattice structures for nanoscale photonics and electronics [J].

Gudiksen, MS ;

Lauhon, LJ ;

Wang, J ;

Smith, DC ;

Lieber, CM .

NATURE, 2002, 415 (6872) :617-620

[9] GAAS P-N-JUNCTION FORMED IN QUANTUM WIRE CRYSTALS [J].

HARAGUCHI, K ;

KATSUYAMA, T ;

HIRUMA, K ;

OGAWA, K .

APPLIED PHYSICS LETTERS, 1992, 60 (06) :745-747

[10] Room-temperature ultraviolet nanowire nanolasers [J].

Huang, MH ;

Mao, S ;

Feick, H ;

Yan, HQ ;

Wu, YY ;

Kind, H ;

Weber, E ;

Russo, R ;

Yang, PD .

SCIENCE, 2001, 292 (5523) :1897-1899

← 1 2 3 →