Fabrication of sharp silicon tips employing anisotropic wet etching and reactive ion etching

被引：30

作者：

Alves, MAR ^{[1
]}

Takeuti, DF ^{[1
]}

Braga, ES ^{[1
]}

机构：

[1] Univ Estadual Campinas, Fac Elect & Comp Engn, BR-13083970 Campinas, SP, Brazil

来源：

MICROELECTRONICS JOURNAL | 2005年 / 36卷 / 01期

基金：

巴西圣保罗研究基金会;

关键词：

silicon tip arrays; wet etching; plasma etching; thermal oxidation;

D O I：

10.1016/j.mejo.2004.10.004

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We developed a process to obtain sharper silicon tips by employing anisotropic etching in a KOH solution followed by SF6 plasma etch. The tips were further sharpened using the established thermal oxidation technique to decrease the cone angle and, therefore, obtain smaller curvature radii. We have analyzed the impact of such changes in geometry on a figure of merit associated with the field emission characteristics. An increase in the figure of merit by a factor of three was found in relation to the tips before sharpening. (C) 2004 Elsevier Ltd. All rights reserved.

引用

页码：51 / 54

页数：4

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