A Single-Event Transient Radiation Hardened Low-Dropout Regulator for LC Voltage-Controlled Oscillator

被引：5
作者：
Chen, Xi [1 ,2 ]
Guo, Qiancheng [1 ]
Yuan, Hengzhou [1 ]
Guo, Yang [1 ]
机构：
[1] Natl Univ Def Technol, Coll Comp Sci & Technol, Changsha 410073, Peoples R China
[2] Changsha Univ, Coll Elect Informat & Elect Engn, Changsha 410022, Peoples R China
来源：
SYMMETRY-BASEL | 2022年 / 14卷 / 04期
基金：
中国国家自然科学基金;
关键词：
radiation-hardened-by-design (RHBD); single-event transient (SET); voltage regulator; low-dropout regulator (LDO); voltage-controlled oscillator (VCO); SOFT-ERROR; TOLERANT; SET; SENSITIVITY; IMPACT; CLOCK; GHZ;
D O I：
10.3390/sym14040788
中图分类号：
O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];
学科分类号：
07 ; 0710 ; 09 ;
摘要：
A voltage-controlled oscillator (VCO) is an essential part of the clock circuitry in satellite communication systems. Low-dropout regulators (LDO) provide stable voltage supply to the VCO and inevitably bring in new radiation-sensitive nodes. In this paper, by conducting single-event transient (SET) sensitivity analysis of LDO in voltage-regulated VCO, we find the sensitive nodes of LDO in oscillation circuits located on the relevant transistors that determine the bias voltage of the tail transistor in the error amplifier (EA). To immunize SET, a symmetrical hardening method combining sensitive node splitting and resistive-decoupling is proposed for the sensitive nodes. This method achieves 80.8% analog single-event transient (ASET) mitigation. This study was conducted in 28-nm CMOS process.
引用
收藏
页数：14
相关论文
共 31 条
[1]   Single-Event Transient Testing of Low Dropout PNP Series Linear Voltage Regulators [J].
Allen, Gregory R. ;
Adell, Philippe C. ;
Chen, Dakai ;
Musil, Paul .
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2012, 59 (06) :2764-2771
[2]   Single-Event Effect Responses of Integrated Planar Inductors in 65-nm CMOS [J].
Biereigel, Stefan ;
Kulis, Szymon ;
Leroux, Paul ;
Moreira, Paulo ;
Koelpin, Alexander ;
Prinzie, Jeffrey .
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2021, 68 (11) :2587-2597
[3]   Modeling of Single Event Transients With Dual Double-Exponential Current Sources: Implications for Logic Cell Characterization [J].
Black, Dolores A. ;
Robinson, William H. ;
Wilcox, Ian Z. ;
Limbrick, Daniel B. ;
Black, Jeffrey D. .
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2015, 62 (04) :1540-1549
[4]   Effects of technology scaling on the SET sensitivity of RF CMOS voltage-controlled oscillators [J].
Boulghassoul, Y ;
Massengill, LW ;
Sternberg, AL ;
Bhuva, BL .
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2005, 52 (06) :2426-2432
[5]   An 8-12.5-GHz LC PLL with Dual VCO and Noise-Reduced LDO Regulator for Multilane Multiprotocol SerDes in 28-nm CMOS Technology [J].
Chen, Jian ;
Zhang, Wei ;
Sun, Qingqing ;
Liu, Lizheng .
ELECTRONICS, 2021, 10 (14)
[6]   Impact of VCO topology on SET induced frequency response [J].
Chen, Wenjian ;
Varanasi, Niha ;
Pouget, Vincent ;
Barnaby, Hugh J. ;
Vermeire, Bert ;
Adell, Philippe C. ;
Copani, Tino ;
Fouillat, Pascal .
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2007, 54 (06) :2500-2505
[7]   Analysis of Single-Event Effects in a Radiation-Hardened Low-Jitter PLL Under Heavy Ion and Pulsed Laser Irradiation [J].
Chen, Zhuojun ;
Lin, Min ;
Ding, Ding ;
Zheng, Yunlong ;
Sang, Zehua ;
Zou, Shichang .
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2017, 64 (01) :106-112
[8]   Analysis of single events effects on monolithic PLL frequency synthesizers [J].
Chung, Hoon Hee ;
Chen, Wenjian ;
Bakkaloglu, Bertan ;
Barnaby, Hugh J. ;
Vermeire, Bert ;
Kiaei, Sayfe .
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2006, 53 (06) :3539-3543
[9]   A single-event transient hardened LDO regulator with built-in filter [J].
Duan, Zhikui ;
Ding, Yi ;
Lu, Chong ;
Zhao, Zhenyu ;
Hu, Jianguo ;
Tan, Hongzhou .
IEICE ELECTRONICS EXPRESS, 2015, 12 (22)
[10]   Fast-Transient Radiation-Hardened Low-Dropout Voltage Regulator for Space Applications [J].
Fan, Hua ;
Feng, Lang ;
Cen, Yuanjun ;
Fang, Zheng ;
Li, Yongkai ;
Qi, Xu ;
Feng, Quanyuan ;
Gatti, Umberto ;
Wei, Qi ;
Heidari, Hadi .
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2021, 68 (05) :1094-1102
1234