A 4.7 mW W-Band LNA with 4.2 dB NF and 12 dB Gain Using Drain to Gate Feedback in 45nm CMOS RFSOI Technology

被引：0
作者：
Gao, Li [1 ]
Ma, Qian [1 ]
Rebeiz, Gabriel M. [1 ]
机构：
[1] Univ Calif San Diego, La Jolla, CA 92093 USA
来源：
PROCEEDINGS OF THE 2018 IEEE RADIO FREQUENCY INTEGRATED CIRCUITS SYMPOSIUM (RFIC) | 2018年
关键词：
CMOS; low noise amplifier; low power; W-band; integrated circuit; silicon-on-insulator (SOI);
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This paper presents a W-band low-noise amplifier using 45nm CMOS RFSOI. The amplifier topology consists of a two-stage common-source design followed by a one-stage cascode, with drain-to-gate feedback applied to the last stage to further increase the gain. The measured gain is > 10 dB at 80-95 GHz with a peak of 12 dB at 90 GHz. The measured noise figure (NF) is < 4.9 dB at 85-95 GHz with minimum of 4.2 dB at 90 GHz. This is achieved with a total power consumption of 4.7 mW. To our knowledge, this represents record-performance in term of gain, NF and power consumption at W-band for all silicon technologies.
引用
收藏
页码：280 / 283
页数：4
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