Fabrication of exchange-biased epitaxial magnetic tunnel junctions with a Heusler alloy Co2Cr0.6Fe0.4Al thin film

被引:5
作者
Ishikawa, T. [1 ]
Marukame, T. [1 ]
Hakamata, S. [1 ]
Matsuda, K.-i. [1 ]
Uemura, T. [1 ]
Yamamoto, M. [1 ]
机构
[1] Hokkaido Univ, Div Elect Informat, Grad Sch Informat Sci & Technol, Kita Ku, Sapporo, Hokkaido 0600814, Japan
关键词
magnetic tunnel junctions; exchange bias; half-metallic ferromagnets; Heusler alloys; MgO tunnel barrier;
D O I
10.1016/j.jmmm.2006.10.684
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Exchange- biased epitaxial magnetic tunnel junctions ( MTJs) with a Heusler alloy Co2Cr0.6Fe0.4Al ( CCFA) lower electrode, a MgO tunnel barrier, and a Co50Fe50 upper electrode were fabricated. Reflection high- energy electron diffraction observations indicated that all layers of the CCFA/ MgO/ Co50Fe50 MTJ layer structure were grown epitaxially. The fabricated epitaxial MTJs exhibited clear exchange-biased tunnel magnetoresistance ( TMR) characteristics with high TMR ratios of 102% at room temperature and 291% at 4.2 K. From the TMR ratios, a high effective spin polarization of 0.86 at 4.2K was obtained for the epitaxial CCFA films with the B2 structure. (c) 2006 Elsevier B. V. All rights reserved.
引用
收藏
页码:1897 / 1899
页数:3
相关论文
共 16 条
  • [1] Large tunneling magnetoresistance at room temperature using a Heusler alloy with the B2 structure
    Inomata, K
    Okamura, S
    Goto, R
    Tezuka, N
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2003, 42 (4B): : L419 - L422
  • [2] SEARCH FOR HALF-METALLIC COMPOUNDS IN CO(2)MNZ (Z=IIIB, IVB, VB ELEMENT)
    ISHIDA, S
    FUJII, S
    KASHIWAGI, S
    ASANO, S
    [J]. JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1995, 64 (06) : 2152 - 2157
  • [3] Structural and magnetic properties of epitaxially grown full-Heusler alloy Co2MnGe thin films deposited using magnetron sputtering
    Ishikawa, T
    Marukame, T
    Matsuda, K
    Uemura, T
    Arita, M
    Yamamoto, M
    [J]. JOURNAL OF APPLIED PHYSICS, 2006, 99 (08)
  • [4] TUNNELING BETWEEN FERROMAGNETIC-FILMS
    JULLIERE, M
    [J]. PHYSICS LETTERS A, 1975, 54 (03) : 225 - 226
  • [5] Co2MnSi Heusler alloy as magnetic electrodes in magnetic tunnel junctions
    Kämmerer, S
    Thomas, A
    Hütten, A
    Reiss, G
    [J]. APPLIED PHYSICS LETTERS, 2004, 85 (01) : 79 - 81
  • [6] Tunnel magnetoresistance in epitaxial magnetic tunnel junctions using full-Heusler alloy Co2MnGe thin film and MgO tunnel barrier
    Marukame, T
    Ishikawa, T
    Matsuda, K
    Uemura, T
    Yamamoto, M
    [J]. JOURNAL OF APPLIED PHYSICS, 2006, 99 (08)
  • [7] Fabrication of fully epitaxial magnetic tunnel junctions using full-Heusler alloy Co2Cr0.6Fe0.4Al thin film and MgO tunnel barrier
    Marukame, T
    Kasahara, T
    Matsuda, K
    Uemura, T
    Yamamoto, M
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2005, 44 (16-19): : L521 - L524
  • [8] High tunnel magnetoresistance in fully epitaxial magnetic tunnel junctions with a full-Heusler alloy Co2Cr0.6Fe0.4Al thin film
    Marukame, Takao
    Ishikawa, Takayuki
    Matsuda, Ken-Ichi
    Uemura, Tetsuya
    Yamamoto, Masafumi
    [J]. APPLIED PHYSICS LETTERS, 2006, 88 (26)
  • [9] Epitaxial growth Of C02Cr0.6Fe0.4Al Heusler alloy thin films on MgO (001) substrates by magnetron sputtering
    Matsuda, K
    Kasahara, T
    Marukame, T
    Uemura, T
    Yamamoto, M
    [J]. JOURNAL OF CRYSTAL GROWTH, 2006, 286 (02) : 389 - 393
  • [10] Atomic disorder effects on half-metallicity of the full-Heusler alloys Co2(Cr1-xFex)Al:: A first-principles study -: art. no. 144413
    Miura, Y
    Nagao, K
    Shirai, M
    [J]. PHYSICAL REVIEW B, 2004, 69 (14) : 144413 - 1