Fabrication of exchange-biased epitaxial magnetic tunnel junctions with a Heusler alloy Co2Cr0.6Fe0.4Al thin film

被引：5
作者：
Ishikawa, T. [1 ]
Marukame, T. [1 ]
Hakamata, S. [1 ]
Matsuda, K.-i. [1 ]
Uemura, T. [1 ]
Yamamoto, M. [1 ]
机构：
[1] Hokkaido Univ, Div Elect Informat, Grad Sch Informat Sci & Technol, Kita Ku, Sapporo, Hokkaido 0600814, Japan
来源：
JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS | 2007年 / 310卷 / 02期
关键词：
magnetic tunnel junctions; exchange bias; half-metallic ferromagnets; Heusler alloys; MgO tunnel barrier;
D O I：
10.1016/j.jmmm.2006.10.684
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Exchange- biased epitaxial magnetic tunnel junctions ( MTJs) with a Heusler alloy Co2Cr0.6Fe0.4Al ( CCFA) lower electrode, a MgO tunnel barrier, and a Co50Fe50 upper electrode were fabricated. Reflection high- energy electron diffraction observations indicated that all layers of the CCFA/ MgO/ Co50Fe50 MTJ layer structure were grown epitaxially. The fabricated epitaxial MTJs exhibited clear exchange-biased tunnel magnetoresistance ( TMR) characteristics with high TMR ratios of 102% at room temperature and 291% at 4.2 K. From the TMR ratios, a high effective spin polarization of 0.86 at 4.2K was obtained for the epitaxial CCFA films with the B2 structure. (c) 2006 Elsevier B. V. All rights reserved.
引用
收藏
页码：1897 / 1899
页数：3
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