Phase-change heterostructure enables ultralow noise and drift for memory operation

被引：341

作者：

Ding, Keyuan ^{[1
,2
]}

Wang, Jiangjing ^{[3
,4
]}

Zhou, Yuxing ^{[3
]}

Tian, He ^{[5
]}

Lu, Lu ^{[6
]}

Mazzarello, Riccardo ^{[7
,8
]}

Jia, Chunlin ^{[6
,9
]}

Zhang, Wei ^{[3
]}

Rao, Feng ^{[1
,10
]}

Ma, Evan ^{[11
]}

机构：

[1] Shenzhen Univ, Coll Mat Sci & Engn, Shenzhen 518060, Peoples R China

[2] Shenzhen Univ, Coll Optoelect Engn, Key Lab Optoelect Devices & Syst, Minist Educ & Guangdong Prov, Shenzhen 518060, Peoples R China

[3] Xi An Jiao Tong Univ, Ctr Adv Mat Performance Nanoscale, State Key Lab Mech Behav Mat, Xian 710049, Shaanxi, Peoples R China

[4] Yulin Univ, Sch Chem & Chem Engn, Yulin 719000, Peoples R China

[5] Zhejiang Univ, Ctr Electron Microscopy, Sch Mat Sci & Engn, State Key Lab Silicon Mat, Hangzhou 310027, Zhejiang, Peoples R China

[6] Xian Jiaetong Univ, Sch Microelect, State Key Lab Mech Behav Mat, Xian 710049, Shaanxi, Peoples R China

[7] Rhein Westfal TH Aachen, JARA FIT, Inst Theoret Solid State Phys, D-52074 Aachen, Germany

[8] Rhein Westfal TH Aachen, JARA HPC, D-52074 Aachen, Germany

[9] Forschungszentrum Julich, Ernst Ruska Ctr Microscopy & Spect Electrons, D-52425 Julich, Germany

[10] Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R China

[11] Johns Hopkins Univ, Dept Mat Sci & Engn, Baltimore, MD 21218 USA

来源：

SCIENCE | 2019年 / 366卷 / 6462期

基金：

中国国家自然科学基金;

关键词：

PLANE-WAVE; CRYSTALLIZATION; NETWORK; COHP;

D O I：

10.1126/science.aay0291

中图分类号：

O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];

学科分类号：

07 ; 0710 ; 09 ;

摘要：

Artificial intelligence and other data-intensive applications have escalated the demand for data storage and processing. New computing devices, such as phase-change random access memory (PCRAM)-based neuro-inspired devices, are promising options for breaking the von Neumann barrier by unifying storage with computing in memory cells. However, current PCRAM devices have considerable noise and drift in electrical resistance that erodes the precision and consistency of these devices. We designed a phase-change heterostructure (PCH) that consists of alternately stacked phase-change and confinement nanolayers to suppress the noise and drift, allowing reliable iterative RESET and cumulative SET operations for high-performance neuro-inspired computing. Our PCH architecture is amenable to industrial production as an intrinsic materials solution, without complex manufacturing procedure or much increased fabrication cost.

引用

页码：210 / +

页数：25

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