A Moire method for high accuracy alignment in nanoimprint lithography

被引：37

作者：

Muehlberger, M.

Bergmair, I.

Schwinger, W.

Gmainer, M.

Schoeftner, R.

Glinsner, T.

Hasenfuss, Ch.

Hingerl, K.

Vogler, M.

Schmidt, H.

Kley, E. B.

机构：

[1] Profactor GmbH, A-4407 Steyr, Austria

[2] EV Grp, A-4782 St Florian Inn, Austria

[3] CD Lab Surface Opt, A-4040 Linz, Austria

[4] Micro Resist Technol GmbH, D-12555 Berlin, Germany

[5] Univ Jena, Inst Appl Phys, D-07743 Jena, Germany

来源：

MICROELECTRONIC ENGINEERING | 2007年 / 84卷 / 5-8期

关键词：

nanoimprint lithography; alignment; Moire;

D O I：

10.1016/j.mee.2007.01.081

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Nanoimprint lithography (NIL) is a cost efficient technique for the mass production of nanostructures. We demonstrate alignment accuracies in the range of 100 nm and below in UV-based nanoimprint lithography (UV-NIL) using a simple optical technique. The advantages of this technique are the relative simplicity of the marker-design and the whole setup combined with the possibility of an upgrade of existing equipment and still ultra-high precision alignment capabilities. (c) 2007 Elsevier B.V. All rights reserved.

引用

页码：925 / 927

页数：3

共 10 条

[1] Imprint lithography with sub-10 nm feature size and high throughput [J].