FMR Damping in Thin Films with Exchange Bias

被引：3

作者：

Chechenin, Nikolay G. ^{[1
]}

Dzhun, Irina O. ^{[1
]}

Babaytsev, Georgy, V ^{[1
]}

Kozin, Mikhail G. ^{[1
]}

Makunin, Alexey, V ^{[1
]}

Romashkina, Irina L. ^{[1
]}

机构：

[1] Lomonosov Moscow State Univ, Skobeltsyn Inst Nucl Phys, 1-2 Leninskie Gory, Moscow 119991, Russia

来源：

MAGNETOCHEMISTRY | 2021年 / 7卷 / 05期

关键词：

F/AF and AF/F structures; FMR linewidth; external damping factors; internal stray field; FERROMAGNETIC-RESONANCE LINEWIDTH; HIGH-FREQUENCY PROPERTIES; RIPPLE; RELAXATION; SPECTRUM; WIDTH;

D O I：

10.3390/magnetochemistry7050070

中图分类号：

O61 [无机化学];

学科分类号：

070301 ; 081704 ;

摘要：

Ferromagnetic resonance (FMR) linewidth (LW) is a tool for studying the high frequency properties of magnetic materials for their application in high-speed devices. Here, we investigate different mechanisms which determine FMR damping in bilayer ferromagnetic/antiferromagnetic (F/AF and AF/F) exchange bias systems. Variations of FMR LW with the thickness and deposition order of the F and AF layers were studied, as well as their correlation with the exchange bias field and roughness of the sample surface. We observed much larger LW in AF/F structures compared with F/AF samples. It was found that neither the exchange bias nor surface/interface roughness in the samples could explain the difference in LW for F/AF and AF/F samples. Instead, the different underlayer microstructure influenced the grainsize, leading to different angular dispersion of magnetization and different internal stray field in F-layers, promoting a different intensity of magnon scattering and FMR damping in F/AF and AF/F samples.

引用

页数：10

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