3D modeling of silicon quantum dots

We present results of full 3D self-consistent simulations of the energy spectrum in silicon-based symmetric quantum dots. Numerically derived conductance peak dependence upon the depletion and top gate biases closely resembles the experimentally measured ones, suggesting that conductance peak is measured when some discrete energy level in the dot coincides with the Fermi level. Electron wavefunction mode mixing is observed when atomistic description of the impurity distribution in the semiconductor was used. (C) 2000 Academic Press.