850 GHz Receiver and Transmitter Front-Ends Using InP HEMT

被引：55

作者：

Leong, Kevin M. K. H. ^{[1
]}

Mei, Xiaobing ^{[1
]}

Yoshida, Wayne H. ^{[1
]}

Zamora, Alexis ^{[1
]}

Padilla, Jose G. ^{[1
]}

Gorospe, Ben S. ^{[1
]}

Nguyen, Khanh ^{[1
]}

Deal, William R. ^{[1
]}

机构：

[1] Northrop Grumman Corp, Redondo Beach, CA 90278 USA

来源：

IEEE TRANSACTIONS ON TERAHERTZ SCIENCE AND TECHNOLOGY | 2017年 / 7卷 / 04期

关键词：

Indium phosphide; HEMT; terahertz; terahertz monolithic integrated circuit; terahertz transistor;

D O I：

10.1109/TTHZ.2017.2710632

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper reports on development of 850 GHz band receiver and transmitter front-ends using a new generation of 25 nm indium phosphide high electron mobility transistor engineered for high maximum frequency of oscillation f(MAX) and cutoff frequency f(T). Integrated circuits in this technology are used for all receiver and transmitter functions, including low noise amplification and power amplification directly at 850 GHz, as well as frequency conversion. This paper provides a detailed summary of process capability, integrated circuit design and packaging, and an overview of the receiver and transmitter front-ends.

引用

页码：466 / 475

页数：10

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