N-channel operation of pentacene thin-film transistors with ultrathin polymer gate buffer layer

被引：8

作者：

Noda, Kei ^{[1
]}

Tanida, Shinji ^{[1
]}

Kawabata, Hiroshi ^{[2
]}

Matsushige, Kazumi ^{[1
]}

机构：

[1] Kyoto Univ, Dept Elect Sci & Engn, Nishikyo Ku, Kyoto 6158510, Japan

[2] Minist Educ Culture Sports Sci & Technol, Natl Inst Sci & Technol Policy, Chiyoda Ku, Tokyo 1000013, Japan

来源：

SYNTHETIC METALS | 2010年 / 160卷 / 1-2期

关键词：

Gate buffer layer; Electron trap; Ambipolar transport; Organic thin-film transistor; Pentacene; FIELD-EFFECT TRANSISTORS; AMBIPOLAR TRANSPORT; MOBILITY; SURFACE;

D O I：

10.1016/j.synthmet.2009.10.009

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

N-channel operation of pentacene thin-film transistors with ultrathin poly(methyl methacrylate) (PMMA) gate buffer layer and gold source-drain electrode was observed. We prepared pentacene thin-film transistors with an 8-nm thick PMMA buffer layer on SiO2 gate insulators and obtained electron and hole field-effect mobilities of 5.3 x 10(-2) cm(2)/(V s) and 0.21 cm(2)/(Vs), respectively, in a vacuum of 0.1 Pa. In spite of using gold electrodes with a high work function, the electron mobility was considerably improved in comparison with previous studies, because the ultrathin PMMA film could decrease electron traps on SiO2 surfaces, and enhance the electron accumulation by applied gate voltages. (C) 2009 Elsevier B.V. All rights reserved.

引用

页码：83 / 87

页数：5

共 26 条

[1] n-type organic field-effect transistor based on interface-doped pentacene [J].