Ionic Transport Properties in Nanocrystalline Ce0.8A0.2O2-δ (with A = Eu, Gd, Dy, and Ho) Materials

被引：35

作者：

Baral, Ashok Kumar ^{[1
]}

Sankaranarayanan, V. ^{[1
]}

机构：

[1] Indian Inst Technol, Dept Phys, Madras 600036, Tamil Nadu, India

来源：

NANOSCALE RESEARCH LETTERS | 2010年 / 5卷 / 03期

关键词：

Nanostructures; Electrical transport; Dielectric relaxations; Association energy; ELECTRICAL-CONDUCTIVITY; DIELECTRIC-RELAXATION; SOLID ELECTROLYTES; DOPED CERIA; CEO2; BEHAVIOR;

D O I：

10.1007/s11671-010-9527-z

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

The ionic transport properties of nanocrystalline 20 mol% Eu, Gd, Dy, and Ho doped cerias, with average grain size of around 14 nm were studied by correlating electrical, dielectric properties, and various dynamic parameters. Gd-doped nanocrystalline ceria shows higher value of conductivity (i.e., 1.8 x 10(-4) S cm(-1) at 550A degrees C) and a lower value of association energy of oxygen vacancies with trivalent dopants Gd(3+) (i.e., 0.1 eV), compared to others. Mainly the lattice parameters and dielectric constants (epsilon(a)) are found to control the association energy of oxygen vacancies in these nanomaterials, which in turn resulted in the presence of grain and grain boundary conductivity in Gd- and Eu-doped cerias and only significant grain interior conductivity in Dy- and Ho-doped cerias.

引用

页码：637 / 643

页数：7

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