Subcell Development for Wafer-Bonded III-V//Si Tandem Solar Cells

被引：0

作者：

Schygulla, Patrick ^{[1
]}

Heinz, Friedemann ^{[1
]}

Lackner, David ^{[1
]}

Dimroth, Frank ^{[1
]}

机构：

[1] Fraunhofer Inst Solar Energy Syst ISE, Freiburg, Germany

来源：

2020 47TH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE (PVSC) | 2020年

关键词：

multijunction solar cells; MOVPE; GaInAsP; AlGaAs; III-V//Si; EFFICIENCY; LIMIT;

D O I：

10.1109/pvsc45281.2020.9300801

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

This work focuses on the material properties of two III-V semiconductors, AlGaAs and GaInAsP, and their usage as middle cell absorber materials in a wafer-bonded III-V//Si triple-junction solar cell. To this end single-junction solar cells were grown epitaxially lattice matched on GaAs wafers using metalorganic chemical vapor phase epitaxy (MOVPE). By optimizing the growth temperature and the V/III ratio we could increase the open-circuit voltage at a target absorber bandgap of 1.50 eV by up to 100 mV. In the future these results will be implemented into two-terminal III-V//Si triple-junction solar cells to increase the conversion efficiency beyond the current record of 34.1 % under the AM1.5g solar spectrum.

引用

页码：2716 / 2719

页数：4

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