TDS applied to investigate the hydrogen and silane desorption from porous silicon

被引：0

作者：

Martín, P ^{[1
]}

Fernández, JF ^{[1
]}

Sánchez, CR ^{[1
]}

机构：

[1] Univ Autonoma Madrid, Dept Fis Mat, Fac Ciencias, E-28049 Madrid, Spain

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 2000年 / 182卷 / 01期

关键词：

D O I：

10.1002/1521-396X(200011)182:1<255::AID-PSSA255>3.0.CO;2-S

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Hydrogen and silane desorption from n-type porous silicon samples, prepared by electrochemical etching, has been investigated by Thermal Desorption Spectroscopy (TDS). Desorption rates were monitored by a quadrupole mass spectrometer (QMS) during linear heating of the samples. Two peaks have been found in the hydrogen desorption spectra a related to H-2 desorption from drop Si-H and =Si=2H configurations, respectively. Activation energies for hydrogen and silane desorption have been measured by using the heating rate variation method.

引用

页码：255 / 260

页数：6

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