Dilute magnetic semiconductor (In,Mn)Sb: Transport and magnetic properties

被引：10
作者：
Ivanov, V. A.
Pashkova, O. N.
Sanygin, V. P.
Sheverdyaeva, P. M.
Prudnikov, V. N.
Perov, N. S.
Padalko, A. G.
机构：
[1] Russian Acad Sci, NS Kurnakov Gen & Inorgan Chem Inst, Moscow 119991, Russia
[2] Moscow MV Lomonosov State Univ, Dept Phys, Moscow 119992, Russia
[3] Russian Acad Sci, Inst Phys Chem Ceram, Moscow 119361, Russia
来源：
JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS | 2007年 / 310卷 / 02期
基金：
俄罗斯基础研究基金会;
关键词：
dilute magnetic semiconductor; spintronics; magneto-transport properties;
D O I：
10.1016/j.jmmm.2006.10.936
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The magnetotransport and magnetostatic properties of synthesized dilute magnetic semiconductors (DMS) InxMn1-xSb were studied. The samples with x = 0.75 - 1.33 at% Mn manifested the hysteresis at room temperature with the coercive force below 50 Oe and the saturation field about 5 kOe. Both the magnetoresistance and Hall effect were positive. With the Mn concentration decrease the magnetoresistance significantly increased. The co-doping of these DMS with Zn enhances the ferromagnetic properties according to the kinematic exchange theory. (c) 2006 Elsevier B.V. All rights reserved.
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收藏
页码：2132 / 2134
页数：3
相关论文
共 9 条
[1]   Magnetic scattering of spin polarized carriers in (In,Mn)Sb dilute magnetic semiconductor -: art. no. 227203 [J].
Csontos, M ;
Wojtowicz, T ;
Liu, X ;
Dobrowolska, M ;
Jankó, B ;
Furdyna, JK ;
Mihály, G .
PHYSICAL REVIEW LETTERS, 2005, 95 (22)
[2]   Ferromagnetism in dilute magnetic semiconductors and new materials for spintronics [J].
Ivanov, V. A. ;
Ugolkova, E. A. ;
Pashkova, O. N. ;
Sanygin, V. P. ;
Padalko, A. G. .
JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS, 2006, 300 (01) :E32-E36
[3]   Spintronics and spintronics materials [J].
Ivanov, VA ;
Aminov, TG ;
Novotortsev, VM ;
Kalinnikov, VT .
RUSSIAN CHEMICAL BULLETIN, 2004, 53 (11) :2357-2405
[4]  
IVANOV VA, 2004, IZV AKAD NAUK K, P2255
[5]   Double-exchange mechanisms for Mn-doped III-V ferromagnetic semiconductors [J].
Krstajic, PM ;
Peeters, FM ;
Ivanov, VA ;
Fleurov, V ;
Kikoin, K .
PHYSICAL REVIEW B, 2004, 70 (19) :1-16
[6]   Synthesis and properties of In1-xMnxSb solid solutions [J].
Pashkova, O. N. ;
Sanygin, V. P. ;
Ivanov, V. A. ;
Padalko, A. G. ;
Novotortsev, V. M. .
INORGANIC MATERIALS, 2006, 42 (05) :459-462
[7]  
[Пашкова О.Н. Pashkova O.N.], 2006, [Неорганические материалы, Neorganicheskie materialy], V42, P519
[8]   Predicted band-gap pressure coefficients of all diamond and zinc-blende semiconductors: Chemical trends [J].
Wei, SH ;
Zunger, A .
PHYSICAL REVIEW B, 1999, 60 (08) :5404-5411
[9]   In1-xMnxSb -: a narrow-gap ferromagnetic semiconductor [J].
Wojtowicz, T ;
Cywinski, G ;
Lim, WL ;
Liu, X ;
Dobrowolska, M ;
Furdyna, JK ;
Yu, KM ;
Walukiewicz, W ;
Kim, GB ;
Cheon, M ;
Chen, X ;
Wang, SM ;
Luo, H .
APPLIED PHYSICS LETTERS, 2003, 82 (24) :4310-4312
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