Solar-blind AlxGa1-xN-based metal-semiconductor-metal ultraviolet photodetectors

被引：45

作者：

Li, T ^{[1
]}

Lambert, DJH ^{[1
]}

Beck, AL ^{[1
]}

Collins, CJ ^{[1
]}

Yang, B ^{[1
]}

Wong, MM ^{[1
]}

Chowdhury, U ^{[1
]}

Dupuis, RD ^{[1
]}

Campbell, JC ^{[1
]}

机构：

[1] Univ Texas, Dept Elect & Comp Engn, Microelect Res Ctr, Austin, TX 78712 USA

来源：

ELECTRONICS LETTERS | 2000年 / 36卷 / 18期

关键词：

D O I：

10.1049/el:20001110

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Solar-blind Schottky metal-semiconductor-metal photodetectors fabricated on epitaxial Al0.4Ga0.6N layers grown by metalorganic chemical vapour deposition are reported. The devices exhibit low dark current and an external quantum efficiency as high as 49% (at lambda = 272nm) at 90V bias, with a corresponding responsivity R = 107mA/W. A visible-to-UV rejection factor of more than three orders of magnitude is demonstrated. The 3dB bandwidth is 100MHz and the detectivity is estimated to be 3.3 x 10(10)cm.Hz(1/2)/W.

引用

页码：1581 / 1583

页数：3

共 8 条

[1] Very low dark current metal-semiconductor-metal ultraviolet photodetectors fabricated on single-crystal GaN epitaxial layers [J].

Carrano, JC ;

Grudowski, PA ;

Eiting, CJ ;

Dupuis, RD ;

Campbell, JC .

APPLIED PHYSICS LETTERS, 1997, 70 (15) :1992-1994

[2]

LI T, 2000, UNPUB IEEE T ELECT D

[3] AlGaN metal-semiconductor-metal photodiodes [J].

Monroy, E ;

Calle, F ;

Muñoz, E ;

Omnès, F .

APPLIED PHYSICS LETTERS, 1999, 74 (22) :3401-3403

[4] Metalorganic vapor-phase epitaxy-grown AlGaN materials for visible-blind ultraviolet photodetector applications [J].

Omnès, F ;

Marenco, N ;

Beaumont, B ;

de Mierry, P ;

Monroy, E ;

Calle, F ;

Muñoz, E .

JOURNAL OF APPLIED PHYSICS, 1999, 86 (09) :5286-5292

[5] Schottky barrier photodetectors based on AlGaN [J].

Osinsky, A ;

Gangopadhyay, S ;

Lim, BW ;

Anwar, MZ ;

Khan, MA ;

Kuksenkov, DV ;

Temkin, H .

APPLIED PHYSICS LETTERS, 1998, 72 (06) :742-744

[6] High-performance (Al,Ga)N-based solar-blind ultraviolet p-i-n detectors on laterally epitaxially overgrown GaN [J].

Parish, G ;

Keller, S ;

Kozodoy, P ;

Ibbetson, JP ;

Marchand, H ;

Fini, PT ;

Fleischer, SB ;

DenBaars, SP ;

Mishra, UK ;

Tarsa, EJ .

APPLIED PHYSICS LETTERS, 1999, 75 (02) :247-249

[7] Solar-blind UV photodetectors based on GaN/AlGaN p-i-n photodiodes [J].

Pernot, C ;

Hirano, A ;

Iwaya, M ;

Detchprohm, T ;

Amano, H ;

Akasaki, I .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 2000, 39 (5A) :L387-L389

[8] Solar-blind AlGaN photodiodes with very low cutoff wavelength [J].

Walker, D ;

Kumar, V ;

Mi, K ;

Sandvik, P ;

Kung, P ;

Zhang, XH ;

Razeghi, M .

APPLIED PHYSICS LETTERS, 2000, 76 (04) :403-405

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