Impact of Transistor Reliability on RF Oscillator Phase Noise Degradation

被引：0

作者：

Reddy, V. ^{[1
]}

Barton, N. ^{[1
]}

Martin, S. ^{[1
]}

Hung, C. M. ^{[1
]}

Krishnan, A. ^{[1
]}

Chancellor, C. ^{[1
]}

Sundar, S. ^{[1
]}

Tsao, A. ^{[1
]}

Corum, D. ^{[1
]}

Yanduru, N. ^{[1
]}

Madhavi, S. ^{[1
]}

Akhtar, S. ^{[1
]}

Pathak, N. ^{[1
]}

Srinivasan, P. ^{[1
]}

Shichijo, S. ^{[1
]}

Benaissa, K. ^{[1
]}

Roy, A. ^{[1
]}

Chatterjee, T. ^{[1
]}

Taylor, R. ^{[1
]}

Krick, J. ^{[1
]}

Brighton, J. ^{[1
]}

Ondrusek, J. ^{[1
]}

Barry, D. ^{[1
]}

Krishnan, S. ^{[1
]}

机构：

[1] Texas Instruments Inc, Dallas, TX 75243 USA

来源：

2009 IEEE INTERNATIONAL ELECTRON DEVICES MEETING | 2009年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The impact of deep sub-micron CMOS transistor reliability on RF oscillator phase noise degradation is demonstrated along with the importance of off-state drain stress for large signal RF applications. Process and device optimization was successful in reducing phase noise degradation to acceptable levels.

引用

页码：371 / 374

页数：4

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