Photocatalytic Cleavage of Self-Assembled Organic Monolayers by UV-Induced Charge Transfer from GaN Substrates

被引：29

作者：

Howgate, John ^{[2
]}

Schoell, Sebastian J. ^{[2
]}

Hoeb, Marco ^{[2
]}

Steins, Wiebke ^{[2
]}

Baur, Barbara ^{[2
]}

Hertrich, Samira ^{[3
,4
]}

Nickel, Bert ^{[3
,4
]}

Sharp, Ian D. ^{[2
]}

Stutzmann, Martin ^{[2
]}

Eickhoff, Martin ^{[1
]}

机构：

[1] Univ Giessen, Inst Phys 1, D-35392 Giessen, Germany

[2] Tech Univ Munich, Walter Schottky Inst, D-85748 Garching, Germany

[3] Univ Munich, Dept Phys, D-80539 Munich, Germany

[4] Univ Munich, CENS, D-80539 Munich, Germany

来源：

ADVANCED MATERIALS | 2010年 / 22卷 / 24期

关键词：

OXIDE SURFACES; ALKYL; PHOTOOXIDATION; 6H-SIC(0001); LIGHT;

D O I：

10.1002/adma.200903756

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Charge transfer between GaN and organic self-assembled monolayers is demonstrated. Alignment of charge-transfer levels allows for photocatalytic cleavage of aliphatic chains on the semiconductor surface. By variation of the Fermi level within GaN and by comparison to SiC, it is shown that charge transfer can be suppressed and the stability of molecular monolayers can be enhanced in the absence of the appropriate energetic alignment.

引用

页码：2632 / +

页数：6

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