Enhancement of photoluminescence in Sr doped ZnO thin films prepared by spray pyrolysis

被引：37
作者：
Raghavendra, P. V. [1 ,2 ]
Bhat, J. S. [1 ]
Deshpande, N. G. [3 ]
机构：
[1] Karnatak Univ, Dept Phys, Dharwad 580003, Karnataka, India
[2] SDM Coll Engn &Tech, Dept Phys, Dharwad 580002, Karnataka, India
[3] Shivaji Univ, Dept Phys, QSpinTech & Nanomat Lab, Kolhapur 416004, Maharashtra, India
来源：
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING | 2017年 / 68卷
关键词：
Thin film; Zinc Oxide; Sr-doping; Spray pyrolysis; Optical band gap; Photoluminescence; SOL-GEL METHOD; ZINC-OXIDE NANOPARTICLES; PULSED-LASER DEPOSITION; OPTICAL-PROPERTIES; PHOTOCATALYTIC ACTIVITY; ELECTRICAL-PROPERTIES; BAND-GAP; NANOCRYSTALLINE FILMS; STRUCTURAL-PROPERTIES; PHYSICAL-PROPERTIES;
D O I：
10.1016/j.mssp.2017.06.028
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Photoluminescence characteristics of strontium doped zinc oxide (ZnO:Sr) thin films grown by spray pyrolysis method were investigated. The ZnO:Sr films were highly transparent having polycrystalline hexagonal wurtzite structure. A redshift of 130 meV in the optical band gap was observed owing to atomic size mismatch induced defect states and increase in the crystallite size in ZnO:Sr films. The enhancement of intensity of violet emission in room temperature photoluminescence by 250% is in correlation with the improved surface morphology at higher concentration of Sr in ZnO:Sr thin film. The observed increment in visible emissions is attributed to Sr induced oxygen vacancy related recombination in ZnO.
引用
收藏
页码：262 / 269
页数：8
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