Coupling of ferroelectric and valley properties in 2D materials

被引:15
|
作者
Zheng, Jun-Ding [1 ]
Zhao, Yi-Feng [1 ]
Tan, Yi-Fan [1 ]
Guan, Zhao [1 ]
Zhong, Ni [1 ]
Yue, Fang-Yu [1 ]
Xiang, Ping-Hua [1 ]
Duan, Chun-Gang [1 ,2 ]
机构
[1] East China Normal Univ, Dept Elect, Key Lab Polar Mat & Devices MOE, Minist Educ, Shanghai 200241, Peoples R China
[2] Shanxi Univ, Collaborat Innovat Ctr Extreme Opt, Taiyuan 030006, Shanxi, Peoples R China
关键词
Compendex;
D O I
10.1063/5.0112893
中图分类号
O59 [应用物理学];
学科分类号
摘要
Two-dimensional (2D) valleytronic materials are both fundamentally intriguing and practically appealing to explore novel physics and design next-generation devices. However, traditional control means such as optic pumping or magnetic field cannot meet the demands of modern electron devices for miniaturization, low-dissipation, and non-volatility. Thus, it is attractive to combine the ferroelectric property with valley property in a single compound. In this paper, the recent progress of ferroelectric-valley coupling is reviewed. First, we briefly recall the development of valleytronics in the past several years. Then, various structures demonstrating ferroelectric-valley coupling, including heterostructures and intrinsic materials, are introduced. Subsequently, we describe ferroelectric-valley coupling in sliding and adsorption system and the unconventional ferroelectricity in the moire system. Finally, we discuss the research status and outlook. We hope that this perspective will be helpful to bridge the gap between valleytronics and ferroelectrics in 2D materials and inspire further exciting findings.
引用
收藏
页数:20
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