Indentation fracture toughness of single-crystal Bi2Te3 topological insulators

被引：30

作者：

Lamuta, Caterina ^{[1
]}

Cupolillo, Anna ^{[2
]}

Politano, Antonio ^{[2
]}

Aliev, Ziya S. ^{[3
,4
,5
]}

Babanly, Mahammad B. ^{[3
]}

Chulkov, Evgueni V. ^{[5
,6
,7
,8
,9
]}

Pagnotta, Leonardo ^{[1
]}

机构：

[1] Univ Calabria, Dept Mech Energy & Management Engn, Ponte P Bucci,Cubo 44C, I-87036 Arcavacata Di Rende, Italy

[2] Univ Calabria, Dept Phys, Ponte P Bucci,Cubo 44C, I-87036 Arcavacata Di Rende, Italy

[3] ANAS, Inst Catalysis & Inorgan Chem, AZ-1143 Baku, Azerbaijan

[4] ANAS, Inst Phys, AZ-1143 Baku, Azerbaijan

[5] DIPC, Paseo Manuel Lardizabal 4, San Sebastian 20018, Spain

[6] Univ Basque Country, Dept Fis Mat, Apartado 1072, San Sebastian 20018, Spain

[7] Univ Basque Country, CSIC, Ctr Mixto, CFM Mat Phys,Ctr MPC, Paseo Manuel Lardizabal 5, San Sebastian 20018, Spain

[8] St Petersburg State Univ, St Petersburg 198504, Russia

[9] Tomsk State Univ, Tomsk 634050, Russia

来源：

NANO RESEARCH | 2016年 / 9卷 / 04期

关键词：

topological insulators; bismuth telluride (Bi2Te3); fracture toughness; nanoindentation; THIN-FILMS; THERMODYNAMIC PROPERTIES; MECHANICAL-PROPERTIES; SURFACE CONDUCTION; ELASTIC-MODULUS; BI2SE3; PERFORMANCE; TRANSPORT; NANOWIRES; HARDNESS;

D O I：

10.1007/s12274-016-0995-z

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Bismuth telluride (Bi2Te3) is one of the most important commercial thermoelectric materials. In recent years, the discovery of topologically protected surface states in Bi chalcogenides has paved the way for their application in nanoelectronics. Determination of the fracture toughness plays a crucial role for the potential application of topological insulators in flexible electronics and nanoelectromechanical devices. Using depth-sensing nanoindentation tests, we investigated for the first time the fracture toughness of bulk single crystals of Bi2Te3 topological insulators, grown using the Bridgman-Stockbarger method. Our results highlight one of the possible pitfalls of the technology based on topological insulators.

引用

页码：1032 / 1042

页数：11

共 77 条

[1]

[Anonymous], 2011, E39909E2 ASTM

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