Low and High Temperature Boron and Phosphorus Doping of Si for Junctions and MEMS purposes

被引：11

作者：

Gonzatti, F. ^{[1
]}

Hartmann, J. M. ^{[1
]}

Yckache, K. ^{[1
]}

机构：

[1] Minatec, CEA LETI, F-38054 Grenoble 9, France

来源：

SIGE, GE, AND RELATED COMPOUNDS 3: MATERIALS, PROCESSING, AND DEVICES | 2008年 / 16卷 / 10期

关键词：

SELECTIVE EPITAXIAL-GROWTH; CHEMICAL VAPOR-DEPOSITION; RAISED SOURCES; KINETICS; SILICON; DRAINS;

D O I：

10.1149/1.2986805

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

We have investigated the in-situ boron and phosphorus doping of silicon (at 20 Torr). Both low (650 degrees C-750 degrees C) and high (850 degrees C-950 degrees C) temperature doping have been studied. Thin (thick Si:B or Si:P layers would indeed be most useful for junctions (MEMS) formation. Two chemistries have been assessed: one which should be selective versus SiO(2) or Si(3)N(4) (i.e. SiH(2)Cl(2) + HCl), the other which is not (SiH(4)). We have quantified in the paper the impact of diborane and phosphine mass-flows, growth chemistries and temperatures on (i) B or P ions concentrations, (ii) Si:B or Si:P growth rates and (iii) Si:B layer strain state.

引用

收藏

页码：485 / 493

页数：9

相关论文

共 13 条

[1] Analysis of boron strain compensation in silicon-germanium alloys by Raman spectroscopy [J].

Chopra, Saurabh ;

Ozturk, Mehmet C. ;

Misra, Veena ;

McGuire, Kris ;

McNeil, Laurie E. .

APPLIED PHYSICS LETTERS, 2006, 88 (20)

[2] Nanoelectromechanical systems [J].

Ekinci, KL ;

Roukes, ML .

REVIEW OF SCIENTIFIC INSTRUMENTS, 2005, 76 (06)

[3] Effects of high B-doping an Si(001) dangling bond densities, H desorption and film growth kinetics during gas-source molecular beam epitaxy [J].

Glass, G ;

Kim, H ;

Sardela, MR ;

Lu, Q ;

Carlsson, JRA ;

Abelson, JR ;

Greene, JE .

SURFACE SCIENCE, 1997, 392 (1-3) :L63-L68

[4] Growth kinetics and boron doping of very high Ge content SiGe for source/drain engineering [J].

Hartmann, J. M. ;

Gonzatti, F. ;

Fillot, F. ;

Billon, T. .

JOURNAL OF CRYSTAL GROWTH, 2008, 310 (01) :62-70

[5] Growth kinetics of Si on fullsheet, patterned and silicon-on-insulator substrates [J].

Hartmann, JM ;

Abbadie, A ;

Vinet, M ;

Clavelier, L ;

Holliger, P ;

Lafond, D ;

Séméria, MN ;

Gentile, P .

JOURNAL OF CRYSTAL GROWTH, 2003, 257 (1-2) :19-30

[6] Selective epitaxial growth of boron- and phosphorus-doped Si and SiGe for raised sources and drains [J].

Hartmann, JM ;

Clavelier, L ;

Jahan, C ;

Holliger, P ;

Rolland, G ;

Billon, T ;

Defranoux, C .

JOURNAL OF CRYSTAL GROWTH, 2004, 264 (1-3) :36-47

[7] Effect of HCl on the SiGe growth kinetics in reduced pressure-chemical vapor deposition [J].

Hartmann, JM ;

Champay, F ;

Loup, V ;

Rolland, G ;

Séméria, MN .

JOURNAL OF CRYSTAL GROWTH, 2002, 241 (1-2) :93-100

[8] SiGe growth kinetics and doping in reduced pressure-chemical vapor deposition [J].

Hartmann, JM ;

Loup, V ;

Rolland, G ;

Holliger, P ;

Laugier, F ;

Vannuffel, C ;

Séméria, MN .

JOURNAL OF CRYSTAL GROWTH, 2002, 236 (1-3) :10-20

[9] RESISTIVITY OF BULK SILICON AND OF DIFFUSED LAYERS IN SILICON [J].

IRVIN, JC .

BELL SYSTEM TECHNICAL JOURNAL, 1962, 41 (02) :387-+

[10] Agglomeration control during the selective epitaxial growth of Si raised sources and drains on ultra-thin silicon-on-insulator substrates [J].

Jahan, C ;

Faynot, O ;

Tosti, L ;

Hartmann, JM .

JOURNAL OF CRYSTAL GROWTH, 2005, 280 (3-4) :530-538