Thin film transistors for displays on plastic substrates

被引：36

作者：

Lee, MJ ^{[1
]}

Judge, CP ^{[1
]}

Wright, SW ^{[1
]}

机构：

[1] Univ London Imperial Coll Sci Technol & Med, Dept Elect Engn, Thin Film Lab, London SW7 2BT, England

来源：

SOLID-STATE ELECTRONICS | 2000年 / 44卷 / 08期

关键词：

plastic substrate; thin film transistor; low temperature process; cadmium selenide; active matrix;

D O I：

10.1016/S0038-1101(00)00067-8

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have successfully made thin film transistors on transparent, flexible polymer substrates. These transistors have electrical properties suitable for driving the pixels in active matrix liquid crystal displays and also for building integrated row driver circuits. The devices are fabricated on polyethylene naphthalate using a low temperature CdSe process at a maximum temperature of 150 degrees C, by evaporation and radio frequency sputtering onto unheated substrates. with pattern definition using standard photolithography and etching. Electrical properties achieved include carrier field effect mobilities of >30 cm(2)/Vs, threshold voltages of similar to 2 V) switching ratio >10(6), an off-state leakage current of <10(-12) A and an on-state drive current of >1 mu A with a gate voltage swing of <10 V, and a sub-threshold slope of 0.25 V/decade for devices of unity aspect ratio. The electrical properties were found to scale with device channel length and width. (C) 2000 Elsevier Science Ltd. All rights reserved.

引用

页码：1431 / 1434

页数：4

共 13 条

[1]

BAEUERLE R, SID 1999 SAN JOS, P14

[2] Polysilicon thin film transistors fabricated on low temperature plastic substrates [J].