Effect of Stochastic Resonance on Classification Accuracy of Neural Networks Utilizing Inherent Stochasticity in Threshold Voltage of Ovonic Threshold Switching Device

被引:0
作者
Choi, Wooseok [1 ,2 ]
Kwak, Myonghoon [1 ,2 ]
Lee, Donguk [1 ,2 ]
Lee, Sangmin [1 ,2 ]
Lee, Chuljun [1 ,2 ]
Kim, Seyoung [2 ]
Hwang, Hyunsang [1 ,2 ]
机构
[1] Pohang Univ Sci & Technol, Ctr Single Atom Based Semicond Device, Pohang 37673, South Korea
[2] Pohang Univ Sci & Technol, Dept Mat Sci & Engn, Pohang 37673, South Korea
来源
IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY | 2022年 / 10卷
基金
新加坡国家研究基金会;
关键词
Threshold voltage; Image restoration; Performance evaluation; Switches; Stochastic resonance; Signal detection; Gray-scale; neural networks; ovonic threshold switching (OTS); stochastic resonance (SR); NOISE;
D O I
10.1109/JEDS.2022.3195354
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
In this study, stochastic resonance (SR) exploits the inherent stochastic characteristics of the OTS threshold voltage to enhance the inference performance of neural networks. First, the threshold switching of the OTS device is characterized, and a signal detection using an OTS device is proposed. Next, we investigate the impact of stochasticity in the threshold voltage on detecting weak signals in the SR system. Finally, by evaluating the inference performance of the artificial neural network, we confirm that the inherent stochasticity can effectively restore the degraded MNIST image in poor visibility conditions in the OTS device. As a result, the recognition accuracy was improved from 10.28% to 95.78% when the stochasticity characteristic was reflected. These results show that stochasticity in the device can improve system performance.
引用
收藏
页码:666 / 669
页数:4
相关论文
共 26 条
  • [1] [Anonymous], 2008, DIGITAL IMAGE PROCES
  • [2] A THEORY OF STOCHASTIC RESONANCE IN CLIMATIC-CHANGE
    BENZI, R
    PARISI, G
    SUTERA, A
    VULPIANI, A
    [J]. SIAM JOURNAL ON APPLIED MATHEMATICS, 1983, 43 (03) : 565 - 578
  • [3] BENZI R, 1982, TELLUS, V34, P10, DOI 10.1111/j.2153-3490.1982.tb01787.x
  • [4] THE MECHANISM OF STOCHASTIC RESONANCE
    BENZI, R
    SUTERA, A
    VULPIANI, A
    [J]. JOURNAL OF PHYSICS A-MATHEMATICAL AND GENERAL, 1981, 14 (11): : L453 - L457
  • [5] Abrupt glacial climate changes due to stochastic resonance
    Ganopolski, A
    Rahmstorf, S
    [J]. PHYSICAL REVIEW LETTERS, 2002, 88 (03)
  • [6] A Comparator With Reduced Delay Time in 65-nm CMOS for Supply Voltages Down to 0.65 V
    Goll, Bernhard
    Zimmermann, Horst
    [J]. IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS II-EXPRESS BRIEFS, 2009, 56 (11) : 810 - 814
  • [7] Hänggi P, 2002, CHEMPHYSCHEM, V3, P285, DOI 10.1002/1439-7641(20020315)3:3<285::AID-CPHC285>3.0.CO
  • [8] 2-A
  • [9] System-Level Simulation o Hardware Spiking Neural Network Based on Synaptic Transistors and I&F Neuron Circuits
    Hwang, Sungmin
    Kim, Hyungjin
    Park, Jungjin
    Kwon, Min-Woo
    Baek, Myung-Hyun
    Lee, Jeong-Jun
    Park, Byung-Gook
    [J]. IEEE ELECTRON DEVICE LETTERS, 2018, 39 (09) : 1441 - 1444
  • [10] Analytical model for subthreshold conduction and threshold switching in chalcogenide-based memory devices
    Ielmini, Daniele
    Zhang, Yuegang
    [J]. JOURNAL OF APPLIED PHYSICS, 2007, 102 (05)